onsemi NCV57253DWR2G

Description
Half Bridge Based IGBT/MOSFET Driver
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Description
Half Bridge Based IGBT/MOSFET Driver
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Datasheet
Datasheet Summary
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The NCV57253DWR2G is an automotive-qualified, isolated dual-channel IGBT/MOSFET gate driver in a wide-body SOIC-16 package, offering 2.5 kV rms galvanic isolation between input and outputs and 1.5 kV rms differential isolation between output channels. It supports 3.3 V to 20 V logic inputs and up to 32 V output supply voltage, with peak output current of ±6.5 A. Features include programmable dead time, independent disable and ANB control, gate clamping, and compliance with AEC-Q100 and VDE0884-11 standards for 1200 V working voltage.

Datasheet Summary
Powered by GS/AI

The NCV57253DWR2G is an automotive-qualified, isolated dual-channel IGBT/MOSFET gate driver in a wide-body SOIC-16 package, offering 2.5 kV rms galvanic isolation between input and outputs and 1.5 kV rms differential isolation between output channels. It supports 3.3 V to 20 V logic inputs and up to 32 V output supply voltage, with peak output current of ±6.5 A. Features include programmable dead time, independent disable and ANB control, gate clamping, and compliance with AEC-Q100 and VDE0884-11 standards for 1200 V working voltage.

Suppliers

Company
Product
Description
Supplier Links
 - NCV57253DWR2G - Rochester Electronics
Newburyport, MA, United States
Half Bridge Based IGBT/MOSFET Driver

Half Bridge Based IGBT/MOSFET Driver

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number NCV57253DWR2G
Package Type SOIC-16W
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