onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - NDS8435A NDS8435A

Description
Small Signal Field-Effect Transistor
Request a Quote Datasheet
Description
Small Signal Field-Effect Transistor
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
 - NDS8435A - Rochester Electronics
Newburyport, MA, United States
Small Signal Field-Effect Transistor

Small Signal Field-Effect Transistor

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NDS8435A - 060150-NDS8435A - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NDS8435A
060150-NDS8435A
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NDS8435A 060150-NDS8435A
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 060150-NDS8435A Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 2.5W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 7.9A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 67nC @ 10V Max Input Capacitance: 1800pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 23 mOhm @ 7.9A, 10V Popularity: Medium Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Balance Application Field: Used in Power Management, Consumer Electronics

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 060150-NDS8435A
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2.5W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 7.9A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 67nC @ 10V
Max Input Capacitance: 1800pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 23 mOhm @ 7.9A, 10V
Popularity: Medium
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Balance
Application Field: Used in Power Management, Consumer Electronics

Buy Now Datasheet
Single FETs, MOSFETs - NDS8435A-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
NDS8435A-ND
Single FETs, MOSFETs NDS8435A-ND
P-Channel 30V 7.9A (Ta) 2.5W (Ta) Surface Mount 8-SOIC

P-Channel 30V 7.9A (Ta) 2.5W (Ta) Surface Mount 8-SOIC

Buy Now Datasheet

Technical Specifications

  Rochester Electronics Win Source Electronics DigiKey
Product Category RF MOSFET Transistors Metal-Oxide Semiconductor FET (MOSFET) Transistors
Product Number NDS8435A 060150-NDS8435A NDS8435A-ND
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - NDS8435A Single FETs, MOSFETs
Package Type SOIC8 SOT3; 8-SO "8-SOIC (0.154"", 3.90mm Width)"
Polarity P-Channel; P-Channel P-Channel
V(BR)DSS 30 volts
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