onsemi NCV57255DR2G

The NCV57255DR2G is an isolated dual-channel IGBT/MOSFET gate driver in a narrow body SOIC-16 package, designed for automotive applications requiring AEC-Q100 qualification and PPAP capability. It provides 2.5 kV rms galvanic isolation between input and each output, and 1.5 kV rms isolation between outputs. The device supports input logic levels from 3.3 V to 20 V and output supply voltages up to 32 V, with peak output current of ±3.5 A. It features programmable dead time, independent disable control, and integrated gate clamping during short circuits. Common mode transient immunity exceeds 100 kV/μs. Propagation delay is 40 to 80 ns with matching within ±20 ns. The device operates from −40°C to 125°C ambient temperature and meets safety standards per DIN VDE 0884-11 with 1200 V working voltage.