onsemi NCD57253DWR2G

The NCD57253DWR2G is an isolated dual-channel IGBT/MOSFET gate driver in a wide-body SOIC-16 package, designed for half-bridge, dual low-side, or dual high-side applications. It provides 2.5 kV rms galvanic isolation between input and each output and 1.5 kV rms between outputs. The driver delivers ±3.5 A peak output current and supports output bias voltages up to 32 V. Dead time is programmable via an external resistor on the DT pin, and gate clamping is integrated for short-circuit protection. It accepts 3.3 V to 20 V logic inputs and operates from -40°C to 125°C. The device is AEC-Q100 qualified, RoHS compliant, and meets VDE 0884-11 with a 1200 V working voltage. Thermal resistance is 81°C/W with 100 mm² of 2 oz copper on a single-layer PCB.