Renesas Electronics Corporation Discrete Semiconductor Products - Transistors - FETs, MOSFETs NE5550779A-T1A-A

Description
RF Power Field-Effect Transistor, N-Channel MOSFET
  • NE5550779A-T1A-A - Rochester Electronics
    Rochester Electronics
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NE5550779A-T1A-A - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
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Description
RF Power Field-Effect Transistor, N-Channel MOSFET
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
- NE5550779A-T1A-A - Rochester Electronics
Rochester Electronics
Newburyport, MA, United States
NE5550779A-T1A-A
NE5550779A-T1A-A
RF Power Field-Effect Transistor, N-Channel MOSFET

RF Power Field-Effect Transistor, N-Channel MOSFET

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NE5550779A-T1A-A - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
NE5550779A-T1A-A
Discrete Semiconductor Products - Transistors - FETs, MOSFETs NE5550779A-T1A-A
N-CHANNEL POWER MOSFET

N-CHANNEL POWER MOSFET

Supplier's Site

Technical Specifications

  Rochester Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Power MOSFET RF Transistors
Product Number NE5550779A-T1A-A NE5550779A-T1A-A
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel
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