onsemi TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - MUN5135DW1T1G MUN5135DW1T1G

Description
Manufacturer: ON Semiconductor Win Source Part Number: 126880-MUN5135DW1T1G Packaging: Reel - TR Mounting: SMD (SMT) Transistor Polarity: 2 PNP - Pre-Biased (Dual) Resistor - Base (R1) (Ohms): 2.2k Resistor - Emitter Base (R2) (Ohms): 47k Categories: Discrete Semiconductor Products Status: Active Case / Package: SC-88/SC70-6/SOT-363 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 250mV @ 300μA, 10mA Collector Cut-off Current(Max): 500nA Typical Gain (hFE) (Min): 80 @ 5mA, 10V Maximum Power Dissipation: 250mW Popularity: Medium Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Balance
  • TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - MUN5135DW1T1G - 126880-MUN5135DW1T1G - Win Source Electronics
    Win Source Electronics
  • Bipolar Transistor Arrays, Pre-Biased - MUN5135DW1T1GOSCT-ND - DigiKey
    DigiKey
  • Bipolar Transistor Arrays, Pre-Biased - MUN5135DW1T1GOSTR-ND - DigiKey
    DigiKey
  • Bipolar Transistor Arrays, Pre-Biased - MUN5135DW1T1GOSDKR-ND - DigiKey
    DigiKey
  • MUN5135DW1T1G - Rochester Electronics
    Rochester Electronics
  • Discrete Semiconductor Products - Transistors - Bipolar (BJT) - MUN5135DW1T1G - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Brt Transistor, 50V, 47K/2.2Kohm, Sot363, Full Reel; Digital Transistor Polarity Onsemi - 42K1564 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Trans, Dual Pnp, -50V, -0.1A, Sot-363; Digital Transistor Polarity Onsemi - 31AC0165 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Bipolar Transistor Arrays, Pre-Biased - MUN5135DW1T1G - ODG (Origin Data Global)
    ODG (Origin Data Global)
Request a Quote Datasheet
Description
Manufacturer: ON Semiconductor Win Source Part Number: 126880-MUN5135DW1T1G Packaging: Reel - TR Mounting: SMD (SMT) Transistor Polarity: 2 PNP - Pre-Biased (Dual) Resistor - Base (R1) (Ohms): 2.2k Resistor - Emitter Base (R2) (Ohms): 47k Categories: Discrete Semiconductor Products Status: Active Case / Package: SC-88/SC70-6/SOT-363 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 250mV @ 300μA, 10mA Collector Cut-off Current(Max): 500nA Typical Gain (hFE) (Min): 80 @ 5mA, 10V Maximum Power Dissipation: 250mW Popularity: Medium Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - MUN5135DW1T1G - 126880-MUN5135DW1T1G - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - MUN5135DW1T1G
126880-MUN5135DW1T1G
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - MUN5135DW1T1G 126880-MUN5135DW1T1G
Manufacturer: ON Semiconductor Win Source Part Number: 126880-MUN5135DW1T1G Packaging: Reel - TR Mounting: SMD (SMT) Transistor Polarity: 2 PNP - Pre-Biased (Dual) Resistor - Base (R1) (Ohms): 2.2k Resistor - Emitter Base (R2) (Ohms): 47k Categories: Discrete Semiconductor Products Status: Active Case / Package: SC-88/SC70-6/SOT-363 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 250mV @ 300μA, 10mA Collector Cut-off Current(Max): 500nA Typical Gain (hFE) (Min): 80 @ 5mA, 10V Maximum Power Dissipation: 250mW Popularity: Medium Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Balance

Manufacturer: ON Semiconductor
Win Source Part Number: 126880-MUN5135DW1T1G
Packaging: Reel - TR
Mounting: SMD (SMT)
Transistor Polarity: 2 PNP - Pre-Biased (Dual)
Resistor - Base (R1) (Ohms): 2.2k
Resistor - Emitter Base (R2) (Ohms): 47k
Categories: Discrete Semiconductor Products
Status: Active
Case / Package: SC-88/SC70-6/SOT-363
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 250mV @ 300μA, 10mA
Collector Cut-off Current(Max): 500nA
Typical Gain (hFE) (Min): 80 @ 5mA, 10V
Maximum Power Dissipation: 250mW
Popularity: Medium
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Bipolar Transistor Arrays, Pre-Biased - MUN5135DW1T1GOSCT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays, Pre-Biased
MUN5135DW1T1GOSCT-ND
Bipolar Transistor Arrays, Pre-Biased MUN5135DW1T1GOSCT-ND
Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 250mW Surface Mount SC-88/SC70-6/SOT-363

Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 250mW Surface Mount SC-88/SC70-6/SOT-363

Buy Now Datasheet
Bipolar Transistor Arrays, Pre-Biased - MUN5135DW1T1GOSTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays, Pre-Biased
MUN5135DW1T1GOSTR-ND
Bipolar Transistor Arrays, Pre-Biased MUN5135DW1T1GOSTR-ND
Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 250mW Surface Mount SC-88/SC70-6/SOT-363

Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 250mW Surface Mount SC-88/SC70-6/SOT-363

Buy Now Datasheet
Bipolar Transistor Arrays, Pre-Biased - MUN5135DW1T1GOSDKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays, Pre-Biased
MUN5135DW1T1GOSDKR-ND
Bipolar Transistor Arrays, Pre-Biased MUN5135DW1T1GOSDKR-ND
Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 250mW Surface Mount SC-88/SC70-6/SOT-363

Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 250mW Surface Mount SC-88/SC70-6/SOT-363

Buy Now Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore, Singapore
Dual Bipolar Transistor
293-MUN5135DW1T1G
Dual Bipolar Transistor 293-MUN5135DW1T1G
Dual PNP Bipolar Digital Transistor (BRT), SC-88/SC70-6/SOT-363 6 LEAD, 3000-REEL Product overview: MUN5135DW1T1G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual. Search-friendly keywords include transistor, BJT, switching, amplification, Dual, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-MUN5135DW1T1G can be used for catalog matching and distributor lookup.

Dual PNP Bipolar Digital Transistor (BRT), SC-88/SC70-6/SOT-363 6 LEAD, 3000-REEL Product overview: MUN5135DW1T1G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual. Search-friendly keywords include transistor, BJT, switching, amplification, Dual, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-MUN5135DW1T1G can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
- MUN5135DW1T1G - Rochester Electronics
Rochester Electronics
Newburyport, MA, United States
MUN5135DW1T1G
MUN5135DW1T1G
Dual PNP Bipolar Digital Transistor (BRT)

Dual PNP Bipolar Digital Transistor (BRT)

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
Bipolar Transistors - Pre-Biased
MUN5135DW1T1G
Bipolar Transistors - Pre-Biased MUN5135DW1T1G
Bipolar Transistors - Pre-Biased 100mA 50V BRT PNP

Bipolar Transistors - Pre-Biased 100mA 50V BRT PNP

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - MUN5135DW1T1G - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
MUN5135DW1T1G
Discrete Semiconductor Products - Transistors - Bipolar (BJT) MUN5135DW1T1G
TRANS PREBIAS 2PNP 50V SC88

TRANS PREBIAS 2PNP 50V SC88

Supplier's Site
Brt Transistor, 50V, 47K/2.2Kohm, Sot363, Full Reel; Digital Transistor Polarity Onsemi - 42K1564 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Brt Transistor, 50V, 47K/2.2Kohm, Sot363, Full Reel; Digital Transistor Polarity Onsemi
42K1564
Brt Transistor, 50V, 47K/2.2Kohm, Sot363, Full Reel; Digital Transistor Polarity Onsemi 42K1564
BRT TRANSISTOR, 50V, 47K/2.2KOHM, SOT363, FULL REEL; Digital Transistor Polarity:Dual PNP; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:2.2kohm; Base-Emitter Resistor R2:47kohmRoHS Compliant: Yes

BRT TRANSISTOR, 50V, 47K/2.2KOHM, SOT363, FULL REEL; Digital Transistor Polarity:Dual PNP; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:2.2kohm; Base-Emitter Resistor R2:47kohmRoHS Compliant: Yes

Supplier's Site Datasheet
Trans, Dual Pnp, -50V, -0.1A, Sot-363; Digital Transistor Polarity Onsemi - 31AC0165 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Trans, Dual Pnp, -50V, -0.1A, Sot-363; Digital Transistor Polarity Onsemi
31AC0165
Trans, Dual Pnp, -50V, -0.1A, Sot-363; Digital Transistor Polarity Onsemi 31AC0165
TRANS, DUAL PNP, -50V, -0.1A, SOT-363; Digital Transistor Polarity:Dual PNP; Collector Emitter Voltage V(br)ceo:-50V; Continuous Collector Current Ic:-100mA; Base Input Resistor R1:2.2kohm; Base-Emitter Resistor R2:47kohm; Resistor RoHS Compliant: Yes

TRANS, DUAL PNP, -50V, -0.1A, SOT-363; Digital Transistor Polarity:Dual PNP; Collector Emitter Voltage V(br)ceo:-50V; Continuous Collector Current Ic:-100mA; Base Input Resistor R1:2.2kohm; Base-Emitter Resistor R2:47kohm; Resistor RoHS Compliant: Yes

Supplier's Site Datasheet
Bipolar Transistor Arrays, Pre-Biased - MUN5135DW1T1G - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Bipolar Transistor Arrays, Pre-Biased
MUN5135DW1T1G
Bipolar Transistor Arrays, Pre-Biased MUN5135DW1T1G
TRANS PREBIAS 2PNP 50V SC88

TRANS PREBIAS 2PNP 50V SC88

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. Rochester Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company Newark, An Avnet Company ODG (Origin Data Global)
Product Category Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors Transistors Transistors Bipolar RF Transistors
Product Number 126880-MUN5135DW1T1G MUN5135DW1T1GOSCT-ND 293-MUN5135DW1T1G MUN5135DW1T1G MUN5135DW1T1G MUN5135DW1T1G 42K1564 31AC0165 MUN5135DW1T1G
Product Name TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - MUN5135DW1T1G Bipolar Transistor Arrays, Pre-Biased Dual Bipolar Transistor Bipolar Transistors - Pre-Biased Discrete Semiconductor Products - Transistors - Bipolar (BJT) Brt Transistor, 50V, 47K/2.2Kohm, Sot363, Full Reel; Digital Transistor Polarity Onsemi Trans, Dual Pnp, -50V, -0.1A, Sot-363; Digital Transistor Polarity Onsemi Bipolar Transistor Arrays, Pre-Biased
Polarity PNP; 2 PNP - Pre-Biased (Dual) PNP PNP PNP PNP 2 PNP - Pre-Biased (Dual); PNP
Package Type SOT3; SC-88/SC70-6/SOT-363 6-TSSOP, SC-88, SOT-363 SC-88/SC70-6/SOT-363 6 LEAD TO-3 TO-3; SOT3 6-TSSOP, SC-88, SOT-363
IC(max) 100 milliamps 100 milliamps 100 milliamps
VCEO 50 volts 50 volts 50 volts
PD 250 milliwatts
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