onsemi MUN2130T1

The MUN2130T1 is a PNP silicon surface mount transistor with an integrated monolithic bias resistor network, designed to replace discrete transistor and resistor combinations, reducing board space and component count. It is housed in the SC-59 package measuring 2.70 to 3.10 mm in length, 1.30 to 1.70 mm in width, and 2.50 to 3.00 mm in height. The device has a collector-base voltage rating of 50 V, a collector-emitter voltage rating of 50 V, and a continuous collector current of 100 mA. The integrated bias resistors are R1 = 1.0 kΩ and R2 = 1.0 kΩ. It operates with a junction and storage temperature range of -55°C to +150°C, and meets AEC-Q101 qualification standards. Total device dissipation is 230 mW at 25°C on a minimum pad and 338 mW on a 1.0 x 1.0 inch pad, with a thermal resistance from junction-to-ambient of 370°C/W on the larger pad.