Rochester Electronics TRANSISTORS - Transistors - FETs, MOSFETs - RF - MTD2N40ET4 MTD2N40ET4

MTD2N40ET4 is a 400 V, 2 A N-channel power MOSFET in a DPAK package, designed for high-voltage switching applications such as power supplies and PWM motor controls. The device features a drain-source on-resistance of 3.5 Ω max at 25°C, an avalanche energy rating of 45 mJ, and a source-drain diode with a reverse recovery time of 156 ns. It supports continuous drain current of 2.0 A at 25°C and 1.5 A at 100°C, with a maximum power dissipation of 40 W at 25°C case temperature. The DPAK package measures 6.35 mm max in width and 6.73 mm max in length, mounted on a minimum recommended pad size. It is supplied in 2500-unit tape and reel packaging.