Renesas Electronics Corporation Discrete Semiconductor Products - Transistors - FETs, MOSFETs NE3512S02-T1C-A

Description
RF Small Signal Field-Effect Transistor, KU Band, N-Channel, Hetero-junction FET
Request a Quote Datasheet
Description
RF Small Signal Field-Effect Transistor, KU Band, N-Channel, Hetero-junction FET
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
 - NE3512S02-T1C-A - Rochester Electronics
Newburyport, MA, United States
RF Small Signal Field-Effect Transistor, KU Band, N-Channel, Hetero-junction FET

RF Small Signal Field-Effect Transistor, KU Band, N-Channel, Hetero-junction FET

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NE3512S02-T1C-A - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
NE3512S02-T1C-A
Discrete Semiconductor Products - Transistors - FETs, MOSFETs NE3512S02-T1C-A
RF MOSFET HFET 2V S02

RF MOSFET HFET 2V S02

Supplier's Site

Technical Specifications

  Rochester Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category RF MOSFET Transistors RF Transistors
Product Number NE3512S02-T1C-A NE3512S02-T1C-A
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel
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