onsemi Single, Pre-Biased Bipolar Transistors MUN2212T1G

Description
NPN Bipolar Digital Transistor (BRT)
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Description
NPN Bipolar Digital Transistor (BRT)
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Datasheet
Datasheet Summary
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The BRT Transistor (part number 67H6953) is a digital NPN transistor designed for applications requiring a compact solution with integrated biasing. It features a collector-emitter voltage rating of 50V and a continuous collector current rating of 100mA. The device incorporates a monolithic bias resistor network with both a base resistor (R1) and a base-emitter resistor (R2), each valued at 22kOc, which simplifies circuit design and reduces the overall component count. This transistor is AEC-Q101 qualified, making it suitable for automotive applications, and is compliant with RoHS standards, ensuring it is free from lead and halogens. The device is available in various package styles, including SC-59, which aids in minimizing board space. The operating temperature range extends from -55¬8C to +150¬8C, providing versatility for different environmental conditions.

Datasheet Summary
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The BRT Transistor (part number 67H6953) is a digital NPN transistor designed for applications requiring a compact solution with integrated biasing. It features a collector-emitter voltage rating of 50V and a continuous collector current rating of 100mA. The device incorporates a monolithic bias resistor network with both a base resistor (R1) and a base-emitter resistor (R2), each valued at 22kOc, which simplifies circuit design and reduces the overall component count. This transistor is AEC-Q101 qualified, making it suitable for automotive applications, and is compliant with RoHS standards, ensuring it is free from lead and halogens. The device is available in various package styles, including SC-59, which aids in minimizing board space. The operating temperature range extends from -55¬8C to +150¬8C, providing versatility for different environmental conditions.

Suppliers

Company
Product
Description
Supplier Links
 - MUN2212T1G - Rochester Electronics
Newburyport, MA, United States
NPN Bipolar Digital Transistor (BRT)

NPN Bipolar Digital Transistor (BRT)

Supplier's Site Datasheet
Single, Pre-Biased Bipolar Transistors - MUN2212T1GOSCT-ND - DigiKey
Thief River Falls, MN, United States
Single, Pre-Biased Bipolar Transistors
MUN2212T1GOSCT-ND
Single, Pre-Biased Bipolar Transistors MUN2212T1GOSCT-ND
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 338mW Surface Mount SC-59

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 338mW Surface Mount SC-59

Buy Now Datasheet
Single, Pre-Biased Bipolar Transistors - MUN2212T1GOSTR-ND - DigiKey
Thief River Falls, MN, United States
Single, Pre-Biased Bipolar Transistors
MUN2212T1GOSTR-ND
Single, Pre-Biased Bipolar Transistors MUN2212T1GOSTR-ND
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 338mW Surface Mount SC-59

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 338mW Surface Mount SC-59

Buy Now Datasheet
Single, Pre-Biased Bipolar Transistors - MUN2212T1GOSDKR-ND - DigiKey
Thief River Falls, MN, United States
Single, Pre-Biased Bipolar Transistors
MUN2212T1GOSDKR-ND
Single, Pre-Biased Bipolar Transistors MUN2212T1GOSDKR-ND
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 338mW Surface Mount SC-59

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 338mW Surface Mount SC-59

Buy Now Datasheet
Singapore
50V 100mA Bipolar Transistor
292-MUN2212T1G
50V 100mA Bipolar Transistor 292-MUN2212T1G
NPN BJT Transistor, 50V, 100mA, SC-59, 3000-REEL Product overview: MUN2212T1G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, 100mA. Search-friendly keywords include transistor, BJT, switching, amplification, 50V, 100mA, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-MUN2212T1G can be used for catalog matching and distributor lookup.

NPN BJT Transistor, 50V, 100mA, SC-59, 3000-REEL Product overview: MUN2212T1G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, 100mA. Search-friendly keywords include transistor, BJT, switching, amplification, 50V, 100mA, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-MUN2212T1G can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - MUN2212T1G - 102494-MUN2212T1G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - MUN2212T1G
102494-MUN2212T1G
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - MUN2212T1G 102494-MUN2212T1G
Manufacturer: ON Semiconductor Win Source Part Number: 102494-MUN2212T1G Packaging: Reel - TR Mounting: SMD (SMT) Transistor Polarity: NPN - Pre-Biased Resistor - Base (R1) (Ohms): 22k Resistor - Emitter Base (R2) (Ohms): 22k Categories: Discrete Semiconductor Products Status: Active Case / Package: SC-59 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 250mV @ 300μA, 10mA Collector Cut-off Current(Max): 500nA Typical Gain (hFE) (Min): 60 @ 5mA, 10V Maximum Power Dissipation: 338mW Popularity: Medium Fake Threat In the Open Market: 37 pct. Supply and Demand Status: Balance

Manufacturer: ON Semiconductor
Win Source Part Number: 102494-MUN2212T1G
Packaging: Reel - TR
Mounting: SMD (SMT)
Transistor Polarity: NPN - Pre-Biased
Resistor - Base (R1) (Ohms): 22k
Resistor - Emitter Base (R2) (Ohms): 22k
Categories: Discrete Semiconductor Products
Status: Active
Case / Package: SC-59
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 250mV @ 300μA, 10mA
Collector Cut-off Current(Max): 500nA
Typical Gain (hFE) (Min): 60 @ 5mA, 10V
Maximum Power Dissipation: 338mW
Popularity: Medium
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - MUN2212T1G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
MUN2212T1G
Discrete Semiconductor Products - Transistors - Bipolar (BJT) MUN2212T1G
TRANS PREBIAS NPN 50V 0.1A SC59

TRANS PREBIAS NPN 50V 0.1A SC59

Supplier's Site
Sheung Wan, Hong Kong
Bipolar Transistors - Pre-Biased
MUN2212T1G
Bipolar Transistors - Pre-Biased MUN2212T1G
Bipolar Transistors - Pre-Biased SS BR XSTR NPN

Bipolar Transistors - Pre-Biased SS BR XSTR NPN

Buy Now Datasheet
Brt Transistor, 50V, 22K/22Kohm, Sc-59-3; Digital Transistor Polarity Onsemi - 67H6953 - Newark, An Avnet Company
Chicago, IL, United States
Brt Transistor, 50V, 22K/22Kohm, Sc-59-3; Digital Transistor Polarity Onsemi
67H6953
Brt Transistor, 50V, 22K/22Kohm, Sc-59-3; Digital Transistor Polarity Onsemi 67H6953
BRT TRANSISTOR, 50V, 22K/22KOHM, SC-59-3; Digital Transistor Polarity:Single NPN; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:22kohm; Base-Emitter Resistor R2:22kohm RoHS Compliant: Yes

BRT TRANSISTOR, 50V, 22K/22KOHM, SC-59-3; Digital Transistor Polarity:Single NPN; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:22kohm; Base-Emitter Resistor R2:22kohm RoHS Compliant: Yes

Supplier's Site Datasheet
Trans, Npn, 50V, 0.1A, Sc-59; Digital Transistor Polarity Onsemi - 31AC0163 - Newark, An Avnet Company
Chicago, IL, United States
Trans, Npn, 50V, 0.1A, Sc-59; Digital Transistor Polarity Onsemi
31AC0163
Trans, Npn, 50V, 0.1A, Sc-59; Digital Transistor Polarity Onsemi 31AC0163
TRANS, NPN, 50V, 0.1A, SC-59; Digital Transistor Polarity:Single NPN; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:22kohm; Base-Emitter Resistor R2:22kohm; Resistor Ratio, R1 /RoHS Compliant: Yes

TRANS, NPN, 50V, 0.1A, SC-59; Digital Transistor Polarity:Single NPN; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:22kohm; Base-Emitter Resistor R2:22kohm; Resistor Ratio, R1 /RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Newark, An Avnet Company Newark, An Avnet Company
Product Category Bipolar RF Transistors Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors Transistors Transistors
Product Number MUN2212T1G MUN2212T1GOSCT-ND 292-MUN2212T1G 102494-MUN2212T1G MUN2212T1G MUN2212T1G 67H6953 31AC0163
Product Name Single, Pre-Biased Bipolar Transistors 50V 100mA Bipolar Transistor TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - MUN2212T1G Discrete Semiconductor Products - Transistors - Bipolar (BJT) Bipolar Transistors - Pre-Biased Brt Transistor, 50V, 22K/22Kohm, Sc-59-3; Digital Transistor Polarity Onsemi Trans, Npn, 50V, 0.1A, Sc-59; Digital Transistor Polarity Onsemi
Polarity NPN NPN NPN NPN; NPN - Pre-Biased NPN
Package Type SC-59 3 LEAD SOT23; TO-236-3, SC-59, SOT-23-3 SOT3; SC-59 TO-3 TO-3
Packing Method Tape Reel; Tape & Reel Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR
IC(max) 100 milliamps 100 milliamps
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