The BRT Transistor (part number 67H6953) is a digital NPN transistor designed for applications requiring a compact solution with integrated biasing. It features a collector-emitter voltage rating of 50V and a continuous collector current rating of 100mA. The device incorporates a monolithic bias resistor network with both a base resistor (R1) and a base-emitter resistor (R2), each valued at 22kOc, which simplifies circuit design and reduces the overall component count. This transistor is AEC-Q101 qualified, making it suitable for automotive applications, and is compliant with RoHS standards, ensuring it is free from lead and halogens. The device is available in various package styles, including SC-59, which aids in minimizing board space. The operating temperature range extends from -55¬8C to +150¬8C, providing versatility for different environmental conditions.
NPN BJT Transistor, 50V, 100mA, SC-59, 3000-REEL Product overview: MUN2212T1G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, 100mA. Search-friendly keywords include transistor, BJT, switching, amplification, 50V, 100mA, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-MUN2212T1G can be used for catalog matching and distributor lookup.
Manufacturer: ON Semiconductor
Win Source Part Number: 102494-MUN2212T1G
Packaging: Reel - TR
Mounting: SMD (SMT)
Transistor Polarity: NPN - Pre-Biased
Resistor - Base (R1) (Ohms): 22k
Resistor - Emitter Base (R2) (Ohms): 22k
Categories: Discrete Semiconductor Products
Status: Active
Case / Package: SC-59
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 250mV @ 300μA, 10mA
Collector Cut-off Current(Max): 500nA
Typical Gain (hFE) (Min): 60 @ 5mA, 10V
Maximum Power Dissipation: 338mW
Popularity: Medium
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Balance
NPN Bipolar Digital Transistor (BRT)
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 338mW Surface Mount SC-59
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 338mW Surface Mount SC-59
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 338mW Surface Mount SC-59
Bipolar Transistors - Pre-Biased SS BR XSTR NPN
TRANS PREBIAS NPN 50V 0.1A SC59
BRT TRANSISTOR, 50V, 22K/22KOHM, SC-59-3; Digital Transistor Polarity:Single NPN; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:22kohm; Base-Emitter Resistor R2:22kohm RoHS Compliant: Yes
TRANS, NPN, 50V, 0.1A, SC-59; Digital Transistor Polarity:Single NPN; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:22kohm; Base-Emitter Resistor R2:22kohm; Resistor Ratio, R1 /RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Rochester Electronics | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Bipolar RF Transistors | Transistors | Bipolar RF Transistors | Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Transistors | Transistors |
| Product Number | 292-MUN2212T1G | 102494-MUN2212T1G | MUN2212T1G | MUN2212T1GOSCT-ND | MUN2212T1G | MUN2212T1G | 67H6953 | 31AC0163 |
| Product Name | 50V 100mA Bipolar Transistor | TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - MUN2212T1G | Single, Pre-Biased Bipolar Transistors | Bipolar Transistors - Pre-Biased | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | Brt Transistor, 50V, 22K/22Kohm, Sc-59-3; Digital Transistor Polarity Onsemi | Trans, Npn, 50V, 0.1A, Sc-59; Digital Transistor Polarity Onsemi | |
| Polarity | NPN | NPN; NPN - Pre-Biased | NPN | NPN | NPN | |||
| IC(max) | 100 milliamps | 100 milliamps | ||||||
| VCEO | 50 volts | 50 volts | ||||||
| PD | 338 milliwatts |
