onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - NDC7001C NDC7001C

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1082821-NDC7001C Packaging: Reel - TR Mounting: SMD (SMT) FET Type: N and P-Channel FET Feature: Logic Level Gate Family Name: NDC7001C Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SuperSOT-6 Maximum Power Dissipation: 700mW Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 510mA, 340mA Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 1.5nC @ 10V Max Input Capacitance: 20pF @ 25V Maximum Rds On at Id,Vgs: 2 Ohm @ 510mA, 10V Introduction Date: July 23, 1997 ECCN: EAR99 Country of Origin: Hungary, Israel, Philippines Estimated EOL Date: 2028 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Limited Quantity per package: 3k pcs
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1082821-NDC7001C Packaging: Reel - TR Mounting: SMD (SMT) FET Type: N and P-Channel FET Feature: Logic Level Gate Family Name: NDC7001C Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SuperSOT-6 Maximum Power Dissipation: 700mW Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 510mA, 340mA Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 1.5nC @ 10V Max Input Capacitance: 20pF @ 25V Maximum Rds On at Id,Vgs: 2 Ohm @ 510mA, 10V Introduction Date: July 23, 1997 ECCN: EAR99 Country of Origin: Hungary, Israel, Philippines Estimated EOL Date: 2028 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Limited Quantity per package: 3k pcs
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NDC7001C - 1082821-NDC7001C - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NDC7001C
1082821-NDC7001C
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NDC7001C 1082821-NDC7001C
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1082821-NDC7001C Packaging: Reel - TR Mounting: SMD (SMT) FET Type: N and P-Channel FET Feature: Logic Level Gate Family Name: NDC7001C Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SuperSOT-6 Maximum Power Dissipation: 700mW Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 510mA, 340mA Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 1.5nC @ 10V Max Input Capacitance: 20pF @ 25V Maximum Rds On at Id,Vgs: 2 Ohm @ 510mA, 10V Introduction Date: July 23, 1997 ECCN: EAR99 Country of Origin: Hungary, Israel, Philippines Estimated EOL Date: 2028 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Limited Quantity per package: 3k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1082821-NDC7001C
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Family Name: NDC7001C
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SuperSOT-6
Maximum Power Dissipation: 700mW
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 510mA, 340mA
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 1.5nC @ 10V
Max Input Capacitance: 20pF @ 25V
Maximum Rds On at Id,Vgs: 2 Ohm @ 510mA, 10V
Introduction Date: July 23, 1997
ECCN: EAR99
Country of Origin: Hungary, Israel, Philippines
Estimated EOL Date: 2028
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Limited
Quantity per package: 3k pcs

Buy Now Datasheet
FET, MOSFET Arrays - NDC7001CTR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
NDC7001CTR-ND
FET, MOSFET Arrays NDC7001CTR-ND
Mosfet Array N and P-Channel 60V 510mA, 340mA 700mW Surface Mount SuperSOT™-6

Mosfet Array N and P-Channel 60V 510mA, 340mA 700mW Surface Mount SuperSOT™-6

Buy Now Datasheet
FET, MOSFET Arrays - NDC7001CCT-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
NDC7001CCT-ND
FET, MOSFET Arrays NDC7001CCT-ND
Mosfet Array N and P-Channel 60V 510mA, 340mA 700mW Surface Mount SuperSOT™-6

Mosfet Array N and P-Channel 60V 510mA, 340mA 700mW Surface Mount SuperSOT™-6

Buy Now Datasheet
FET, MOSFET Arrays - NDC7001CDKR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
NDC7001CDKR-ND
FET, MOSFET Arrays NDC7001CDKR-ND
Mosfet Array N and P-Channel 60V 510mA, 340mA 700mW Surface Mount SuperSOT™-6

Mosfet Array N and P-Channel 60V 510mA, 340mA 700mW Surface Mount SuperSOT™-6

Buy Now Datasheet
 - NDC7001C - Rochester Electronics
Newburyport, MA, United States
Dual N & P Channel Enhancement Mode Field Effect Transistor 60V

Dual N & P Channel Enhancement Mode Field Effect Transistor 60V

Supplier's Site Datasheet
MOSFETs - 7614574 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
7614574
MOSFETs 7614574
MOSFET N/P-Ch 60V 0.51A/0.34A SuperSOT6

MOSFET N/P-Ch 60V 0.51A/0.34A SuperSOT6

Supplier's Site
MOSFETs - 7614574P - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
7614574P
MOSFETs 7614574P
MOSFET N/P-Ch 60V 0.51A/0.34A SuperSOT6

MOSFET N/P-Ch 60V 0.51A/0.34A SuperSOT6

Supplier's Site
MOSFETs - 1787608 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1787608
MOSFETs 1787608
MOSFET N/P-Ch 60V 0.51A/0.34A SuperSOT6

MOSFET N/P-Ch 60V 0.51A/0.34A SuperSOT6

Supplier's Site
FET, MOSFET Arrays - NDC7001C - ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
NDC7001C
FET, MOSFET Arrays NDC7001C
MOSFET N/P-CH 60V SSOT6

MOSFET N/P-CH 60V SSOT6

Supplier's Site Datasheet
Dual N/p Channel Mosfet, 60V Super Sot-6; Transistor Polarity Onsemi - 58K9473 - Newark, An Avnet Company
Chicago, IL, United States
Dual N/p Channel Mosfet, 60V Super Sot-6; Transistor Polarity Onsemi
58K9473
Dual N/p Channel Mosfet, 60V Super Sot-6; Transistor Polarity Onsemi 58K9473
DUAL N/P CHANNEL MOSFET, 60V SUPER SOT-6; Transistor Polarity:Complementa ry N and P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:510mA; On Resistance Rds(on):1ohm; Transistor Mounting:Surface Mount RoHS Compliant: Yes

DUAL N/P CHANNEL MOSFET, 60V SUPER SOT-6; Transistor Polarity:Complementary N and P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:510mA; On Resistance Rds(on):1ohm; Transistor Mounting:Surface Mount RoHS Compliant: Yes

Supplier's Site Datasheet
Dual N/p Channel Mosfet, 60V Super Sot-6, Full Reel; Transistor Polarity Onsemi - 67R2121 - Newark, An Avnet Company
Chicago, IL, United States
Dual N/p Channel Mosfet, 60V Super Sot-6, Full Reel; Transistor Polarity Onsemi
67R2121
Dual N/p Channel Mosfet, 60V Super Sot-6, Full Reel; Transistor Polarity Onsemi 67R2121
DUAL N/P CHANNEL MOSFET, 60V SUPER SOT-6, FULL REEL; Transistor Polarity:Complementa ry N and P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:510mA; On Resistance Rds(on):1ohm; Transistor Mounting:Surface Mount RoHS Compliant: Yes

DUAL N/P CHANNEL MOSFET, 60V SUPER SOT-6, FULL REEL; Transistor Polarity:Complementary N and P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:510mA; On Resistance Rds(on):1ohm; Transistor Mounting:Surface Mount RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NDC7001C - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
NDC7001C
Discrete Semiconductor Products - Transistors - FETs, MOSFETs NDC7001C
MOSFET N/P-CH 60V 0.51A SSOT6

MOSFET N/P-CH 60V 0.51A SSOT6

Supplier's Site
Sheung Wan, Hong Kong
MOSFET
NDC7001C
MOSFET NDC7001C
MOSFET Dual N/P Channel FET Enhancement Mode

MOSFET Dual N/P Channel FET Enhancement Mode

Buy Now Datasheet

Technical Specifications

  Win Source Electronics DigiKey Rochester Electronics RS Components, Ltd. RS Components, Ltd. ODG (Origin Data Global) Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1082821-NDC7001C NDC7001CTR-ND NDC7001C 7614574 7614574P NDC7001C 58K9473 NDC7001C NDC7001C
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - NDC7001C FET, MOSFET Arrays MOSFETs MOSFETs FET, MOSFET Arrays Dual N/p Channel Mosfet, 60V Super Sot-6; Transistor Polarity Onsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity P-Channel P-Channel; N and P-Channel P-Channel
V(BR)DSS 60 volts 60 volts
PD 700 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3; SOT23; SuperSOT-6 SOT23; SOT-23-6 Thin, TSOT-23-6 SSOT6-EUT SOT23; Sot-23 SOT23; SOT-23 SOT23; SOT-23-6 Thin, TSOT-23-6 TO-3
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