Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250mW Surface Mount SC-88/SC70-6/SOT-363
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250mW Surface Mount SC-88/SC70-6/SOT-363
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250mW Surface Mount SC-88/SC70-6/SOT-363
TRANS 2NPN PREBIAS 0.25W SOT363
Dual NPN Bipolar Digital Transistor (BRT)
NPN Digital Transistor 50V 100mA SOT-363-6 T/R Product overview: MUN5215DW1T1G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, 100mA. Search-friendly keywords include transistor, BJT, switching, amplification, 50V, 100mA, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-MUN5215DW1T1G can be used for catalog matching and distributor lookup.
Manufacturer: ON Semiconductor
Win Source Part Number: 024608-MUN5215DW1T1G
Packaging: Reel - TR
Mounting: SMD (SMT)
Transistor Polarity: 2 NPN - Pre-Biased (Dual)
Resistor - Base (R1) (Ohms): 10k
Categories: Discrete Semiconductor Products
Status: Active
Case / Package: SC-88/SC70-6/SOT-363
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 250mV @ 1mA, 10mA
Collector Cut-off Current(Max): 500nA
Typical Gain (hFE) (Min): 160 @ 5mA, 10V
Maximum Power Dissipation: 250mW
Popularity: Medium
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Balance
TRANS 2NPN PREBIAS 0.25W SOT363
BRT TRANSISTOR, 50V, 10KOHM, SC88; Digital Transistor Polarity:Dual NPN; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:10kohm; Base-Emitter Resistor R2:-; No. of Pins:6 Pin RoHS Compliant: Yes
BRT TRANSISTOR, 50V, 10KOHM, SC88, FULL REEL; Digital Transistor Polarity:Dual NPN; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:10kohm; Base-Emitter Resistor R2:- RoHS Compliant: Yes
TRANS 2NPN PREBIAS 0.25W SOT363
| DigiKey | ODG (Origin Data Global) | Rochester Electronics | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Utmel Electronic Limited | Newark, An Avnet Company | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Transistors | Transistors | Transistors | Transistors | Bipolar RF Transistors |
| Product Number | MUN5215DW1T1GOSCT-ND | MUN5215DW1T1G | MUN5215DW1T1G | 293-MUN5215DW1T1G | 024608-MUN5215DW1T1G | 598-MUN5215DW1T1G | 84K8821 | 88H4936 | MUN5215DW1T1G |
| Product Name | Bipolar Transistor Arrays, Pre-Biased | Bipolar Transistor Arrays, Pre-Biased | 50V 100mA Bipolar Transistor | TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - MUN5215DW1T1G | TRANS 2NPN PREBIAS 0.25W SOT363 | Brt Transistor, 50V, 10Kohm, Sc88; Digital Transistor Polarity Onsemi | Brt Transistor, 50V, 10Kohm, Sc88, Full Reel; Digital Transistor Polarity Onsemi | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | |
| Polarity | NPN | 2 NPN - Pre-Biased (Dual); NPN | NPN | NPN | NPN; 2 NPN - Pre-Biased (Dual) | NPN; NPN | |||
| Package Type | 6-TSSOP, SC-88, SOT-363 | 6-TSSOP, SC-88, SOT-363 | SC-88/SC70-6/SOT-363 6 LEAD | SOT3; SC-88/SC70-6/SOT-363 | TO-3 | TO-3 | |||
| IC(max) | 100 milliamps | 100 milliamps | 100 milliamps | ||||||
| VCEO | 50 volts | 50 volts | 50 volts | ||||||
| Output Power | 0.2500 watts |
