Rochester Electronics TRANSISTORS - Transistors - FETs, MOSFETs - RF - MTB6N60E1 MTB6N60E1

The MTB6N60E1 is an N-channel enhancement-mode MOSFET designed for high-energy switching applications in power supplies, converters, and PWM motor controls. It features a 600 V drain-to-source voltage rating and a continuous drain current of 6.0 A at 25°C, reducing to 4.6 A at 100°C. The device is packaged in a D2PAK-SL (Case 418C-01) with a maximum lead temperature of 260°C for 10 seconds. It has a maximum on-resistance of 1.2 Ω at 10 V gate voltage and 3 A drain current, and a single-pulse avalanche energy rating of 405 mJ. Thermal resistance from junction to case is 1.0 °C/W, and junction-to-ambient is 62.5 °C/W when mounted normally. The drain-source diode exhibits a reverse recovery time of 266 ns and is characterized for bridge circuit use. The part meets typical industrial ruggedness standards for avalanche and switching performance, with an operating temperature range of -55°C to 150°C.