onsemi NCV57256DR2G

The NCV57256DR2G is an isolated dual-channel IGBT/MOSFET gate driver in a narrow body SOIC-16 package, designed for automotive and other applications requiring AEC-Q100 qualification and PPAP capability. It provides 2.5 kVrms galvanic isolation between input and outputs, with 1.5 kVrms differential isolation between output channels, and supports a maximum working voltage of 1200 VPK. The driver delivers up to 3.5 A peak source and sink current per channel, with programmable dead time via an external resistor on the DT pin, and includes integrated output clamping during short circuits. It accepts 3.3 V to 20 V input logic levels and up to 32 V output supply voltage, with under-voltage lockout on all supplies. The device complies with RoHS and is Pb-free.