Manufacturer: Renesas Electronics America
Win Source Part Number: 094478-NE3512S02-T1D
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Balance
RF MOSFET HFET 2V S02 Product overview: NE3512S02-T1D-A from Renesas Electronics Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 2V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 2V, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-NE3512S02-T1D-A can be used for catalog matching and distributor lookup.
RF Small Signal Field-Effect Transistor, KU Band, N-Channel, Hetero-junction FET
RF MOSFET HFET 2V S02
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Rochester Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF MOSFET Transistors | RF Transistors |
| Product Number | 094478-NE3512S02-T1D-A | 285-NE3512S02-T1D-A | NE3512S02-T1D-A | NE3512S02-T1D-A |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - NE3512S02-T1D-A | 2V MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | |
| Package Type | SOT3 | Bulk | S02, MICRO-X-4 | 4-SMD, Flat Leads |
