Rochester Electronics TRANSISTORS - Transistors - FETs, MOSFETs - RF - MTY25N60E MTY25N60E

The MTY25N60E is an N-channel power MOSFET designed for high-voltage, high-speed switching applications such as power supplies, converters, and PWM motor controls. It is packaged in a TO-264 case with dimensions of 28.0 to 29.0 mm in length, 19.3 to 20.3 mm in width, and 4.7 to 5.3 mm in height. The device has a drain-source voltage rating of 600 V, a continuous drain current of 25 A, and a maximum power dissipation of 300 W. Thermal resistance from junction to case is 0.42 °C/W, and the operating temperature range is -55 to 150 °C. The MOSFET is specified for avalanche energy up to 3000 mJ and features a typical on-resistance of 210 mΩ at 25°C. It meets AEC-Q200 and RoHS standards.