onsemi Dual 0.25W Bipolar Transistor MUN5212DW1T1

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon

TRANS 2NPN PREBIAS 0.25W SOT363 / Dual Bias Resistor Trasnsistors Product overview: MUN5212DW1T1 from ON Semiconductor is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual, 0.25W. Search-friendly keywords include transistor, BJT, switching, amplification, Dual, 0.25W, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-MUN5212DW1T1 can be used for catalog matching and distributor lookup.

Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250mW Surface Mount SC-88/SC70-6/SOT-363

Manufacturer: ON Semiconductor
Win Source Part Number: 809409-MUN5212DW1T1
Packaging: Reel
Mounting Style: SMD
Power - Max: 250mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Part Status: Obsolete (End Of Life)
Supplier Device Package: SC-88/SC70-6/SOT-363
Manufacturer Package: 6-TSSOP, SC-88, SOT-363
Current - Collector (Ic) (Maximum): 100mA
Voltage - Collector Emitter Breakdown (Maximum): 50V
Current - Collector Cutoff (Maximum): 500nA
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 3,000
MSL Level: 1 (Unlimited)
Vce Saturation (Maximum) at Ib, Ic: 250mV at 300μA, 10mA
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Part Number Series: MUN52**DW1T
DC Current Gain (hFE) (Min) at Ic, Vce: 60 at 5mA, 10V