onsemi NCP5359MNR2G

Description
Half Bridge Based MOSFET Driver
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Description
Half Bridge Based MOSFET Driver
Request a Quote
Datasheet
Datasheet Summary
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The NCP5359MNR2G is a dual MOSFET gate driver in a DFN-10 package, designed for synchronous buck converters in notebook and desktop power systems. It drives both high-side and low-side MOSFETs with a 3 nF load, featuring 25 ns propagation delay and 20 ns transition time. The device supports a bootstrap voltage up to 35 V, operates with a 10 V to 13.2 V supply, and includes adaptive nonoverlap control, undervoltage lockout, thermal shutdown at 150-170 °C, and an enable pin with bidirectional fault signaling. It complies with VRM 11.1 specifications and is Pb-free. The DFN-10 package measures 3.00 × 3.00 mm with a 0.50 mm pitch and an exposed pad for thermal performance, offering a junction-to-air thermal resistance of 45 °C/W.

Datasheet Summary
Powered by GS/AI

The NCP5359MNR2G is a dual MOSFET gate driver in a DFN-10 package, designed for synchronous buck converters in notebook and desktop power systems. It drives both high-side and low-side MOSFETs with a 3 nF load, featuring 25 ns propagation delay and 20 ns transition time. The device supports a bootstrap voltage up to 35 V, operates with a 10 V to 13.2 V supply, and includes adaptive nonoverlap control, undervoltage lockout, thermal shutdown at 150-170 °C, and an enable pin with bidirectional fault signaling. It complies with VRM 11.1 specifications and is Pb-free. The DFN-10 package measures 3.00 × 3.00 mm with a 0.50 mm pitch and an exposed pad for thermal performance, offering a junction-to-air thermal resistance of 45 °C/W.

Suppliers

Company
Product
Description
Supplier Links
 - NCP5359MNR2G - Rochester Electronics
Newburyport, MA, United States
Half Bridge Based MOSFET Driver

Half Bridge Based MOSFET Driver

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number NCP5359MNR2G
Package Type SOLCC10
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