onsemi Single, Pre-Biased Bipolar Transistors MUN2214T1G

Description
TRANS PREBIAS NPN 50V 100MA SC59
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Description
TRANS PREBIAS NPN 50V 100MA SC59
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Datasheet
Datasheet Summary
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The Bipolar Pre-Biased / Digital Transistor, part number 90W4729, is designed to simplify circuit design by integrating a monolithic bias resistor network with a single NPN transistor. It features a collector-base voltage rating of 50 V and a continuous collector current rating of 100 mA. The device includes a series base resistor of 10 kOc and a base-emitter resistor of 47 kOc, which helps reduce component count and board space. This transistor is RoHS compliant and is suitable for automotive applications, being AEC-Q101 qualified and PPAP capable. The product is available in multiple package styles, including SC-59, SOT-23, SC-70/SOT-323, SC-75, and SOT-723, making it versatile for various design requirements.

Datasheet Summary
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The Bipolar Pre-Biased / Digital Transistor, part number 90W4729, is designed to simplify circuit design by integrating a monolithic bias resistor network with a single NPN transistor. It features a collector-base voltage rating of 50 V and a continuous collector current rating of 100 mA. The device includes a series base resistor of 10 kOc and a base-emitter resistor of 47 kOc, which helps reduce component count and board space. This transistor is RoHS compliant and is suitable for automotive applications, being AEC-Q101 qualified and PPAP capable. The product is available in multiple package styles, including SC-59, SOT-23, SC-70/SOT-323, SC-75, and SOT-723, making it versatile for various design requirements.

Suppliers

Company
Product
Description
Supplier Links
Single, Pre-Biased Bipolar Transistors - MUN2214T1G - ODG (Origin Data Global)
Shenzhen, China
Single, Pre-Biased Bipolar Transistors
MUN2214T1G
Single, Pre-Biased Bipolar Transistors MUN2214T1G
TRANS PREBIAS NPN 50V 100MA SC59

TRANS PREBIAS NPN 50V 100MA SC59

Supplier's Site Datasheet
 - MUN2214T1G - Rochester Electronics
Newburyport, MA, United States
NPN Bipolar Digital Transistor (BRT)

NPN Bipolar Digital Transistor (BRT)

Supplier's Site Datasheet
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - MUN2214T1G - 1081134-MUN2214T1G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - MUN2214T1G
1081134-MUN2214T1G
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - MUN2214T1G 1081134-MUN2214T1G
Manufacturer: ON Semiconductor Win Source Part Number: 1081134-MUN2214T1G Packaging: Reel - TR Mounting: SMD (SMT) Transistor Polarity: NPN - Pre-Biased Family Name: MUN2214 Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 47k Categories: Discrete Semiconductor Products Status: Active Case / Package: SC-59 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 250mV @ 300μA, 10mA Collector Cut-off Current(Max): 500nA Typical Gain (hFE) (Min): 80 @ 5mA, 10V Maximum Power Dissipation: 230mW Alternative Parts (Cross-Reference): SMUN2214T1G; DTC114YCAHZGT116; DTC114YCAT116; Introduction Date: July 29, 1996 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2026 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Balance Application Field: Used in Industrial, Power Management

Manufacturer: ON Semiconductor
Win Source Part Number: 1081134-MUN2214T1G
Packaging: Reel - TR
Mounting: SMD (SMT)
Transistor Polarity: NPN - Pre-Biased
Family Name: MUN2214
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): 47k
Categories: Discrete Semiconductor Products
Status: Active
Case / Package: SC-59
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 250mV @ 300μA, 10mA
Collector Cut-off Current(Max): 500nA
Typical Gain (hFE) (Min): 80 @ 5mA, 10V
Maximum Power Dissipation: 230mW
Alternative Parts (Cross-Reference): SMUN2214T1G; DTC114YCAHZGT116; DTC114YCAT116;
Introduction Date: July 29, 1996
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2026
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Balance
Application Field: Used in Industrial, Power Management

Buy Now Datasheet
Singapore
50V 100mA Bipolar Transistor
292-MUN2214T1G
50V 100mA Bipolar Transistor 292-MUN2214T1G
NPN Digital BJT Transistor 50V 100mA SC-59 Tape & Reel Product overview: MUN2214T1G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, 100mA. Search-friendly keywords include transistor, BJT, switching, amplification, 50V, 100mA, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-MUN2214T1G can be used for catalog matching and distributor lookup.

NPN Digital BJT Transistor 50V 100mA SC-59 Tape & Reel Product overview: MUN2214T1G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, 100mA. Search-friendly keywords include transistor, BJT, switching, amplification, 50V, 100mA, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-MUN2214T1G can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single, Pre-Biased Bipolar Transistors - MUN2214T1GOSCT-ND - DigiKey
Thief River Falls, MN, United States
Single, Pre-Biased Bipolar Transistors
MUN2214T1GOSCT-ND
Single, Pre-Biased Bipolar Transistors MUN2214T1GOSCT-ND
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 230mW Surface Mount SC-59

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 230mW Surface Mount SC-59

Buy Now Datasheet
Single, Pre-Biased Bipolar Transistors - MUN2214T1GOSTR-ND - DigiKey
Thief River Falls, MN, United States
Single, Pre-Biased Bipolar Transistors
MUN2214T1GOSTR-ND
Single, Pre-Biased Bipolar Transistors MUN2214T1GOSTR-ND
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 230mW Surface Mount SC-59

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 230mW Surface Mount SC-59

Buy Now Datasheet
Single, Pre-Biased Bipolar Transistors - MUN2214T1GOSDKR-ND - DigiKey
Thief River Falls, MN, United States
Single, Pre-Biased Bipolar Transistors
MUN2214T1GOSDKR-ND
Single, Pre-Biased Bipolar Transistors MUN2214T1GOSDKR-ND
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 230mW Surface Mount SC-59

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 230mW Surface Mount SC-59

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - MUN2214T1G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
MUN2214T1G
Discrete Semiconductor Products - Transistors - Bipolar (BJT) MUN2214T1G
TRANS PREBIAS NPN 50V 0.1A SC59

TRANS PREBIAS NPN 50V 0.1A SC59

Supplier's Site
Brt Transistor, 50V, 47K/10Kohm, Sc-59, Full Reel; Digital Transistor Polarity Onsemi - 45J1714 - Newark, An Avnet Company
Chicago, IL, United States
Brt Transistor, 50V, 47K/10Kohm, Sc-59, Full Reel; Digital Transistor Polarity Onsemi
45J1714
Brt Transistor, 50V, 47K/10Kohm, Sc-59, Full Reel; Digital Transistor Polarity Onsemi 45J1714
BRT TRANSISTOR, 50V, 47K/10KOHM, SC-59, FULL REEL; Digital Transistor Polarity:Single NPN; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:10kohm; Base-Emitter Resistor R2:47kohm RoHS Compliant: Yes

BRT TRANSISTOR, 50V, 47K/10KOHM, SC-59, FULL REEL; Digital Transistor Polarity:Single NPN; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:10kohm; Base-Emitter Resistor R2:47kohm RoHS Compliant: Yes

Supplier's Site Datasheet
Bipolar Pre-Biased / Digital Transistor, Brt, 50 V, 100 Ma, 10 Kohm, 47 Kohm, 4.7, Sc-59 Rohs Compliant Onsemi - 90W4729 - Newark, An Avnet Company
Chicago, IL, United States
Bipolar Pre-Biased / Digital Transistor, Brt, 50 V, 100 Ma, 10 Kohm, 47 Kohm, 4.7, Sc-59 Rohs Compliant Onsemi
90W4729
Bipolar Pre-Biased / Digital Transistor, Brt, 50 V, 100 Ma, 10 Kohm, 47 Kohm, 4.7, Sc-59 Rohs Compliant Onsemi 90W4729
Bipolar Pre-Biased / Digital Transistor, BRT, 50 V, 100 mA, 10 kohm, 47 kohm, 4.7, SC-59 RoHS Compliant: Yes

Bipolar Pre-Biased / Digital Transistor, BRT, 50 V, 100 mA, 10 kohm, 47 kohm, 4.7, SC-59 RoHS Compliant: Yes

Supplier's Site Datasheet
Transistor, Rf, Npn, 50V, Sc-59-3; Digital Transistor Polarity Onsemi - 04X6638 - Newark, An Avnet Company
Chicago, IL, United States
Transistor, Rf, Npn, 50V, Sc-59-3; Digital Transistor Polarity Onsemi
04X6638
Transistor, Rf, Npn, 50V, Sc-59-3; Digital Transistor Polarity Onsemi 04X6638
TRANSISTOR, RF, NPN, 50V, SC-59-3; Digital Transistor Polarity:Single NPN; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:10kohm; Base-Emitter Resistor R2:47kohm; Resistor Ratio,RoHS Compliant: Yes

TRANSISTOR, RF, NPN, 50V, SC-59-3; Digital Transistor Polarity:Single NPN; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:10kohm; Base-Emitter Resistor R2:47kohm; Resistor Ratio,RoHS Compliant: Yes

Supplier's Site
Sheung Wan, Hong Kong
Bipolar Transistors - Pre-Biased
MUN2214T1G
Bipolar Transistors - Pre-Biased MUN2214T1G
Bipolar Transistors - Pre-Biased 50 V Dual NPN BiPolar DRT

Bipolar Transistors - Pre-Biased 50 V Dual NPN BiPolar DRT

Buy Now Datasheet

Technical Specifications

  ODG (Origin Data Global) Rochester Electronics Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company Newark, An Avnet Company Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors
Product Number MUN2214T1G MUN2214T1G 1081134-MUN2214T1G 292-MUN2214T1G MUN2214T1GOSCT-ND MUN2214T1G 45J1714 90W4729 04X6638 MUN2214T1G
Product Name Single, Pre-Biased Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - MUN2214T1G 50V 100mA Bipolar Transistor Single, Pre-Biased Bipolar Transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT) Brt Transistor, 50V, 47K/10Kohm, Sc-59, Full Reel; Digital Transistor Polarity Onsemi Bipolar Pre-Biased / Digital Transistor, Brt, 50 V, 100 Ma, 10 Kohm, 47 Kohm, 4.7, Sc-59 Rohs Compliant Onsemi Transistor, Rf, Npn, 50V, Sc-59-3; Digital Transistor Polarity Onsemi Bipolar Transistors - Pre-Biased
Polarity NPN - Pre-Biased; NPN NPN NPN; NPN - Pre-Biased NPN NPN NPN
Package Type SOT23; TO-236-3, SC-59, SOT-23-3 SC-59 3 LEAD SOT3; SC-59 SOT23; TO-236-3, SC-59, SOT-23-3 TO-3 TO-3 TO-3
IC(max) 100 milliamps 100 milliamps 100 milliamps
VCEO 50 volts 50 volts 50 volts
Output Power 0.2300 watts
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