onsemi TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - MUN2212T1 MUN2212T1

Description
Manufacturer: ON Semiconductor Win Source Part Number: 803173-MUN2212T1 Packaging: Cut Tape (CT) Mounting Style: SMD Power - Max: 338mW Transistor Type: NPN - Pre-Biased Part Status: Obsolete (End Of Life) Supplier Device Package: SC-59 Manufacturer Package: TO-236-3, SC-59, SOT-23-3 Current - Collector (Ic) (Maximum): 100mA Voltage - Collector Emitter Breakdown (Maximum): 50V Current - Collector Cutoff (Maximum): 500nA Popularity: Medium Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 1 MSL Level: 1 (Unlimited) Vce Saturation (Maximum) at Ib, Ic: 250mV at 300μA, 10mA Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 22 kOhms Part Number Series: MUN2212 DC Current Gain (hFE) (Min) at Ic, Vce: 60 at 5mA, 10V
Request a Quote Datasheet
Description
Manufacturer: ON Semiconductor Win Source Part Number: 803173-MUN2212T1 Packaging: Cut Tape (CT) Mounting Style: SMD Power - Max: 338mW Transistor Type: NPN - Pre-Biased Part Status: Obsolete (End Of Life) Supplier Device Package: SC-59 Manufacturer Package: TO-236-3, SC-59, SOT-23-3 Current - Collector (Ic) (Maximum): 100mA Voltage - Collector Emitter Breakdown (Maximum): 50V Current - Collector Cutoff (Maximum): 500nA Popularity: Medium Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 1 MSL Level: 1 (Unlimited) Vce Saturation (Maximum) at Ib, Ic: 250mV at 300μA, 10mA Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 22 kOhms Part Number Series: MUN2212 DC Current Gain (hFE) (Min) at Ic, Vce: 60 at 5mA, 10V
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - MUN2212T1 - 803173-MUN2212T1 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - MUN2212T1
803173-MUN2212T1
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - MUN2212T1 803173-MUN2212T1
Manufacturer: ON Semiconductor Win Source Part Number: 803173-MUN2212T1 Packaging: Cut Tape (CT) Mounting Style: SMD Power - Max: 338mW Transistor Type: NPN - Pre-Biased Part Status: Obsolete (End Of Life) Supplier Device Package: SC-59 Manufacturer Package: TO-236-3, SC-59, SOT-23-3 Current - Collector (Ic) (Maximum): 100mA Voltage - Collector Emitter Breakdown (Maximum): 50V Current - Collector Cutoff (Maximum): 500nA Popularity: Medium Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 1 MSL Level: 1 (Unlimited) Vce Saturation (Maximum) at Ib, Ic: 250mV at 300μA, 10mA Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 22 kOhms Part Number Series: MUN2212 DC Current Gain (hFE) (Min) at Ic, Vce: 60 at 5mA, 10V

Manufacturer: ON Semiconductor
Win Source Part Number: 803173-MUN2212T1
Packaging: Cut Tape (CT)
Mounting Style: SMD
Power - Max: 338mW
Transistor Type: NPN - Pre-Biased
Part Status: Obsolete (End Of Life)
Supplier Device Package: SC-59
Manufacturer Package: TO-236-3, SC-59, SOT-23-3
Current - Collector (Ic) (Maximum): 100mA
Voltage - Collector Emitter Breakdown (Maximum): 50V
Current - Collector Cutoff (Maximum): 500nA
Popularity: Medium
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 1
MSL Level: 1 (Unlimited)
Vce Saturation (Maximum) at Ib, Ic: 250mV at 300μA, 10mA
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Part Number Series: MUN2212
DC Current Gain (hFE) (Min) at Ic, Vce: 60 at 5mA, 10V

Buy Now
 - MUN2212T1 - Rochester Electronics
Newburyport, MA, United States
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon

Supplier's Site Datasheet
Singapore
100mA 50V Bipolar Transistor
292-MUN2212T1
100mA 50V Bipolar Transistor 292-MUN2212T1
100mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, CASE 318D-04, SC-59, 3 PIN Product overview: MUN2212T1 from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100mA, 50V. Search-friendly keywords include transistor, BJT, switching, amplification, 100mA, 50V, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-MUN2212T1 can be used for catalog matching and distributor lookup.

100mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, CASE 318D-04, SC-59, 3 PIN Product overview: MUN2212T1 from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100mA, 50V. Search-friendly keywords include transistor, BJT, switching, amplification, 100mA, 50V, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-MUN2212T1 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - MUN2212T1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
MUN2212T1
Discrete Semiconductor Products - Transistors - Bipolar (BJT) MUN2212T1
TRANS BRT NPN 100MA 50V SC59

TRANS BRT NPN 100MA 50V SC59

Supplier's Site

Technical Specifications

  Win Source Electronics Rochester Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited
Product Category RF Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number 803173-MUN2212T1 MUN2212T1 292-MUN2212T1 MUN2212T1
Product Name TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - MUN2212T1 100mA 50V Bipolar Transistor Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN NPN
Package Type SOT3; SOT23 CPH3
Packing Method Tape Reel; Cut Tape (CT) Tape Reel; Tape & Reel Cut Tape (CT)
Power Gain 60 dB
Output Power 0.3380 watts
Unlock Full Specs
to access all available technical data