onsemi 100mA 50V Bipolar Transistor MUN2212T1

Description
100mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, CASE 318D-04, SC-59, 3 PIN Product overview: MUN2212T1 from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100mA, 50V. Search-friendly keywords include transistor, BJT, switching, amplification, 100mA, 50V, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-MUN2212T1 can be used for catalog matching and distributor lookup.
  • MUN2212T1 - Rochester Electronics
    Rochester Electronics
  • TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - MUN2212T1 - 803173-MUN2212T1 - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - Bipolar (BJT) - MUN2212T1 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
100mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, CASE 318D-04, SC-59, 3 PIN Product overview: MUN2212T1 from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100mA, 50V. Search-friendly keywords include transistor, BJT, switching, amplification, 100mA, 50V, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-MUN2212T1 can be used for catalog matching and distributor lookup.
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
ERSAELECTRONICS PTE. LTD.
Singapore
100mA 50V Bipolar Transistor
292-MUN2212T1
100mA 50V Bipolar Transistor 292-MUN2212T1
100mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, CASE 318D-04, SC-59, 3 PIN Product overview: MUN2212T1 from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100mA, 50V. Search-friendly keywords include transistor, BJT, switching, amplification, 100mA, 50V, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-MUN2212T1 can be used for catalog matching and distributor lookup.

100mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, CASE 318D-04, SC-59, 3 PIN Product overview: MUN2212T1 from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100mA, 50V. Search-friendly keywords include transistor, BJT, switching, amplification, 100mA, 50V, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-MUN2212T1 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
- MUN2212T1 - Rochester Electronics
Rochester Electronics
Newburyport, MA, United States
MUN2212T1
MUN2212T1
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon

Supplier's Site Datasheet
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - MUN2212T1 - 803173-MUN2212T1 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - MUN2212T1
803173-MUN2212T1
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - MUN2212T1 803173-MUN2212T1
Manufacturer: ON Semiconductor Win Source Part Number: 803173-MUN2212T1 Packaging: Cut Tape (CT) Mounting Style: SMD Power - Max: 338mW Transistor Type: NPN - Pre-Biased Part Status: Obsolete (End Of Life) Supplier Device Package: SC-59 Manufacturer Package: TO-236-3, SC-59, SOT-23-3 Current - Collector (Ic) (Maximum): 100mA Voltage - Collector Emitter Breakdown (Maximum): 50V Current - Collector Cutoff (Maximum): 500nA Popularity: Medium Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 1 MSL Level: 1 (Unlimited) Vce Saturation (Maximum) at Ib, Ic: 250mV at 300μA, 10mA Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 22 kOhms Part Number Series: MUN2212 DC Current Gain (hFE) (Min) at Ic, Vce: 60 at 5mA, 10V

Manufacturer: ON Semiconductor
Win Source Part Number: 803173-MUN2212T1
Packaging: Cut Tape (CT)
Mounting Style: SMD
Power - Max: 338mW
Transistor Type: NPN - Pre-Biased
Part Status: Obsolete (End Of Life)
Supplier Device Package: SC-59
Manufacturer Package: TO-236-3, SC-59, SOT-23-3
Current - Collector (Ic) (Maximum): 100mA
Voltage - Collector Emitter Breakdown (Maximum): 50V
Current - Collector Cutoff (Maximum): 500nA
Popularity: Medium
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 1
MSL Level: 1 (Unlimited)
Vce Saturation (Maximum) at Ib, Ic: 250mV at 300μA, 10mA
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Part Number Series: MUN2212
DC Current Gain (hFE) (Min) at Ic, Vce: 60 at 5mA, 10V

Buy Now
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - MUN2212T1 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
MUN2212T1
Discrete Semiconductor Products - Transistors - Bipolar (BJT) MUN2212T1
TRANS BRT NPN 100MA 50V SC59

TRANS BRT NPN 100MA 50V SC59

Supplier's Site

Technical Specifications

  ERSAELECTRONICS PTE. LTD. Rochester Electronics Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Bipolar RF Transistors Bipolar RF Transistors RF Transistors Bipolar RF Transistors
Product Number 292-MUN2212T1 MUN2212T1 803173-MUN2212T1 MUN2212T1
Product Name 100mA 50V Bipolar Transistor TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - MUN2212T1 Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN NPN
IC(max) 100 milliamps 100 milliamps
VCEO 50 volts 50 volts
PD 338 milliwatts
TJ -55 C (-67 F)
Unlock Full Specs
to access all available technical data