Motorola Solutions, Inc. MTD3N25E1

The MTD3N25E is an N-channel enhancement-mode MOSFET designed for high-speed switching in power supplies, converters, and PWM motor controls, particularly in bridge circuits requiring fast diode recovery and avalanche ruggedness. It is packaged in a DPAK (CASE 369A-13, Style 2) surface-mount package measuring up to 6.35 mm in length, 6.73 mm in width, and 2.38 mm in height. The device has a drain-source voltage rating of 250 V, a continuous drain current of 3.0 A at 25°C, and a maximum power dissipation of 40 W. Its drain-source on-resistance is specified at 1.4 Ω maximum, with a single-pulse avalanche energy rating of 45 mJ. The source-drain body diode exhibits a reverse recovery time of 153 ns and is characterized for bridge circuit use. The thermal resistance from junction to case is 3.13 °C/W, and the operating junction temperature ranges from -55°C to 150°C.