Rochester Electronics TRANSISTORS - Transistors - FETs, MOSFETs - RF - MTW7N80E MTW7N80E

The MTW7N80E is an N-channel power MOSFET rated for 800 V drain-source voltage and 7 A continuous drain current, designed for high-speed switching in power supplies, converters, and motor controls. It is packaged in a TO-247 case with dimensions of 20.3 mm length, 15.9 mm width, and 5.3 mm thickness. The device has a maximum on-resistance of 1.0 Ω at 10 V gate drive and 25°C, and it supports a single-pulse avalanche energy of 661 mJ. Thermal resistance from junction to case is 0.70 °C/W. The MOSFET meets RoHS standards and is suitable for bridge circuits due to its fast recovery source-drain diode with a reverse recovery time of 651 ns. The gate threshold voltage ranges from 2.0 to 4.0 V, and it operates from -55°C to 150°C junction temperature.