The NCD5703BDR2G is a high-current IGBT gate driver in an 8-pin SOIC package, designed for applications such as solar inverters, motor control, and uninterruptible power supplies. It provides +4 A / −6 A peak output current with low output impedance and includes desaturation protection, accurate under-voltage lockout (UVLO), and an active open-drain fault output. The device supports a negative output voltage for enhanced IGBT driving by applying a negative bias to the VEE pin, with a wide VCC operating range from UVLO to 20 V. It meets AEC-Q100 automotive qualification standards and is Pb-free, halogen-free, and RoHS compliant. The thermal resistance is 176 °C/W for an SOIC-8 package with 100 mm² of copper area. Operating ambient temperature range is −40 °C to 125 °C.
IGBT Gate Drivers, High-Current, Stand-Alone, Non-inverting
| Rochester Electronics | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | NCD5703BDR2G |
| Package Type | SOIC-8 |
