The MUN5331DW1T1G is a dual complementary bias resistor transistor containing an NPN and PNP transistor with integrated 2.2 kΩ base and emitter resistors, designed to reduce component count and board space. It is packaged in SOT-363 and operates with a maximum collector-emitter voltage of 50 V and collector current of 100 mA. The device is RoHS compliant, Pb-free, halogen-free, and AEC-Q101 qualified. Its total device dissipation is 250 mW at 25°C when both junctions are heated, with a junction temperature range of −55°C to +150°C.
Manufacturer: ON Semiconductor
Win Source Part Number: 886513-MUN5331DW1T1G
Features: Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA - 250mW Surface Mount SC-88/SC70-6/SOT-363
Package: Bulk
Package: 6-TSSOP, SC-88, SOT-363
Mounting: Surface Mount
Categories: Discrete Semiconductor Products
Case / Package: SC-88/SC70-6/SOT-363
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Limited
Quantity per package: 1
| Win Source Electronics | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 886513-MUN5331DW1T1G |
| Product Name | TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - MUN5331DW1T1G |
| Polarity | NPN; PNP |
