onsemi 365V 20A IGBT Transistor NGB8207NT4G

Insulated Gate Bipolar Transistor, 20A I(C), 365V V(BR)CES, N-Channel

Trans IGBT Chip N-CH 365V 20A 3-Pin(2+Tab) D2PAK T/R Product overview: NGB8207NT4G from onsemi is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 365V, 20A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 365V, 20A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-NGB8207NT4G can be used for catalog matching and distributor lookup.

Manufacturer: ON Semiconductor
Win Source Part Number: 1082975-NGB8207NT4G
Packaging: Reel - TR
Mounting: SMD (SMT)
Input Type: Logic
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK
Maximum Current Collector: 20A
VCEO Maximum Collector-Emitter Breakdown Voltage: 365V
Maximum Power Dissipation: 165W
Pulsed Collector Current: 50A
Collector-emitter saturation voltage(Max): 2.6V @ 4V, 20A
Popularity: Medium
Fake Threat In the Open Market: 64 pct.
Supply and Demand Status: Sufficient
Quantity per package: 800

IGBT 365V 20A 165W Surface Mount D²PAK