Rochester Electronics TRANSISTORS - Transistors - FETs, MOSFETs - RF - MTD20P06HDL MTD20P06HDL

The MTD20P06HDL is a P-channel power MOSFET designed for low-voltage, high-speed switching in power supplies, converters, and PWM motor controls. It is packaged in a DPAK (Surface Mount) case, measuring 6.22 mm max in length, 6.73 mm max in width, and 2.38 mm max in height. The device has a drain-source voltage rating of 60 V, a continuous drain current of 15 A at 25°C, and a maximum power dissipation of 72 W. Its static drain-source on-resistance is specified up to 175 mΩ at 7.5 A and 5 V gate drive. Avalanche energy capability is rated at 300 mJ. Thermal resistance from junction to case is 1.73°C/W, and junction-to-ambient is 71.4°C/W for the Pb-free version. The part meets RoHS requirements and is qualified under AEC-Q200. It features a fast recovery body diode suitable for bridge circuits and is guaranteed for operation from -55°C to 150°C junction temperature.