onsemi Discrete Semiconductor Products - Transistors - IGBTs - Single NGTB03N60R2DT4G

Win Source Part Number: 1130737-NGTB03N60R2DT4G
Category: Discrete Semiconductor Products>Transistors - IGBTs - Single
Package: Tape & Reel
Standard Package: 2,500
Mounting: SMD (SMT)
Power - Max: 49 W
Reverse Recovery Time (trr): 65 ns
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 9 A
Current - Collector Pulsed (Icm): 12 A
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 3A
Switching Energy: 50µJ (on), 27µJ (off)
Input Type: Standard
Gate Charge: 17 nC
Td (on/off) @ 25°C: 27ns/59ns
Test Condition: 300V, 3A, 30Ohm, 15V
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Temperature Range - Operating: 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 74 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: onsemi
Other Names: NGTB03N60R2DT4GOSDKR,NGTB03N60R2DT4GOSTR,NGTB03N60R2DT4GOSCT
Base Product Number: NGTB03
Product Status: Obsolete

Power Field-Effect Transistor

IGBT, 600 V, 4.5 A, N-Channel, 2500-REEL Product overview: NGTB03N60R2DT4G from onsemi is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 600 V, 4.5 A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, N-Channel, 600 V, 4.5 A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-NGTB03N60R2DT4G can be used for catalog matching and distributor lookup.