onsemi Discrete Semiconductor Products - Transistors - IGBTs - Single NGTB03N60R2DT4G

Win Source Part Number: 1130737-NGTB03N60R2DT4G
Category: Discrete Semiconductor Products>Transistors - IGBTs - Single
Package: Tape & Reel
Standard Package: 2,500
Mounting: SMD (SMT)
Power - Max: 49 W
Reverse Recovery Time (trr): 65 ns
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 9 A
Current - Collector Pulsed (Icm): 12 A
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 3A
Switching Energy: 50µJ (on), 27µJ (off)
Input Type: Standard
Gate Charge: 17 nC
Td (on/off) @ 25°C: 27ns/59ns
Test Condition: 300V, 3A, 30Ohm, 15V
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Temperature Range - Operating: 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 74 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: onsemi
Other Names: NGTB03N60R2DT4GOSDKR,NGTB03N60R2DT4GOSTR,NGTB03N60R2DT4GOSCT
Base Product Number: NGTB03
Product Status: Obsolete

Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
Maximum Continuous Collector Current = 9 A
Maximum Collector Emitter Voltage = 600 V
Maximum Gate Emitter Voltage = ±20V
Maximum Power Dissipation = 49 W
Package Type = DPAK (TO-252)
Mounting Type = Surface Mount
Channel Type = N
Pin Count = 3
Switching Speed = 1MHz
Transistor Configuration = Single
Delivery on production packaging - Reel. This product is non-returnable.

Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
Maximum Continuous Collector Current = 9 A
Maximum Collector Emitter Voltage = 600 V
Maximum Gate Emitter Voltage = ±20V
Maximum Power Dissipation = 49 W
Package Type = DPAK (TO-252)
Mounting Type = Surface Mount
Channel Type = N
Pin Count = 3
Switching Speed = 1MHz
Transistor Configuration = Single

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