Dual NPN Bipolar Digital Transistor (BRT), SC-88/SC70-6/SOT-363
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon
Manufacturer: ON Semiconductor
Win Source Part Number: 024603-MUN5212DW1T1G
Packaging: Reel - TR
Mounting: SMD (SMT)
Transistor Polarity: 2 NPN - Pre-Biased (Dual)
Resistor - Base (R1) (Ohms): 22k
Resistor - Emitter Base (R2) (Ohms): 22k
Categories: Discrete Semiconductor Products
Status: Active
Case / Package: SC-88/SC70-6/SOT-363
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 250mV @ 300μA, 10mA
Collector Cut-off Current(Max): 500nA
Typical Gain (hFE) (Min): 60 @ 5mA, 10V
Maximum Power Dissipation: 250mW
Popularity: Medium
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Balance
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250mW Surface Mount SC-88/SC70-6/SOT-363
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250mW Surface Mount SC-88/SC70-6/SOT-363
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250mW Surface Mount SC-88/SC70-6/SOT-363
TRANS 2NPN PREBIAS 0.25W SOT363
BRT TRANS, NPN, 50V, SOT-363-3; Digital Transistor Polarity:Dual NPN; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:22kohm; Base-Emitter Resistor R2:22kohm; Resistor Ratio, R1 /RoHS Compliant: Yes
BRT TRANSISTOR, 50VDC, 22K/22K, SOT-363; Digital Transistor Polarity:Dual NPN; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:22kohm; Base-Emitter Resistor R2:22kohm RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | Rochester Electronics | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Bipolar RF Transistors | Bipolar RF Transistors | Transistors | Transistors | Bipolar RF Transistors | Transistors | Transistors |
| Product Number | 293-MUN5212DW1T1G | MUN5212DW1T1G | 024603-MUN5212DW1T1G | MUN5212DW1T1GOSCT-ND | MUN5212DW1T1G | 82Y7022 | 51X6044 |
| Product Name | Dual Bipolar Transistor | TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - MUN5212DW1T1G | Bipolar Transistor Arrays, Pre-Biased | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | Brt Trans, Npn, 50V, Sot-363-3; Digital Transistor Polarity Onsemi | Brt Transistor, 50Vdc, 22K/22K, Sot-363; Digital Transistor Polarity Onsemi | |
| Polarity | NPN | NPN | NPN; 2 NPN - Pre-Biased (Dual) | NPN | NPN | ||
| IC(max) | 100 milliamps | 100 milliamps | |||||
| VCEO | 50 volts | 50 volts | |||||
| PD | 250 milliwatts |