onsemi Bipolar Transistor Arrays, Pre-Biased MUN5212DW1T1G

Description
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon
  • MUN5212DW1T1G - Rochester Electronics
    Rochester Electronics
  • Bipolar Transistor Arrays, Pre-Biased - MUN5212DW1T1GOSCT-ND - DigiKey
    DigiKey
  • Bipolar Transistor Arrays, Pre-Biased - MUN5212DW1T1GOSTR-ND - DigiKey
    DigiKey
  • Bipolar Transistor Arrays, Pre-Biased - MUN5212DW1T1GOSDKR-ND - DigiKey
    DigiKey
  • TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - MUN5212DW1T1G - 024603-MUN5212DW1T1G - Win Source Electronics
    Win Source Electronics
  • Brt Trans, Npn, 50V, Sot-363-3; Digital Transistor Polarity Onsemi - 82Y7022 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Brt Transistor, 50Vdc, 22K/22K, Sot-363; Digital Transistor Polarity Onsemi - 51X6044 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - Bipolar (BJT) - MUN5212DW1T1G - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
- MUN5212DW1T1G - Rochester Electronics
Rochester Electronics
Newburyport, MA, United States
MUN5212DW1T1G
MUN5212DW1T1G
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon

Supplier's Site Datasheet
Bipolar Transistor Arrays, Pre-Biased - MUN5212DW1T1GOSCT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays, Pre-Biased
MUN5212DW1T1GOSCT-ND
Bipolar Transistor Arrays, Pre-Biased MUN5212DW1T1GOSCT-ND
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250mW Surface Mount SC-88/SC70-6/SOT-363

Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250mW Surface Mount SC-88/SC70-6/SOT-363

Buy Now Datasheet
Bipolar Transistor Arrays, Pre-Biased - MUN5212DW1T1GOSTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays, Pre-Biased
MUN5212DW1T1GOSTR-ND
Bipolar Transistor Arrays, Pre-Biased MUN5212DW1T1GOSTR-ND
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250mW Surface Mount SC-88/SC70-6/SOT-363

Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250mW Surface Mount SC-88/SC70-6/SOT-363

Buy Now Datasheet
Bipolar Transistor Arrays, Pre-Biased - MUN5212DW1T1GOSDKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays, Pre-Biased
MUN5212DW1T1GOSDKR-ND
Bipolar Transistor Arrays, Pre-Biased MUN5212DW1T1GOSDKR-ND
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250mW Surface Mount SC-88/SC70-6/SOT-363

Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250mW Surface Mount SC-88/SC70-6/SOT-363

Buy Now Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore
Dual Bipolar Transistor
293-MUN5212DW1T1G
Dual Bipolar Transistor 293-MUN5212DW1T1G
Dual NPN Bipolar Digital Transistor (BRT), SC-88/SC70-6/SOT-363 6 LEAD, 3000-REEL Product overview: MUN5212DW1T1G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual. Search-friendly keywords include transistor, BJT, switching, amplification, Dual, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-MUN5212DW1T1G can be used for catalog matching and distributor lookup.

Dual NPN Bipolar Digital Transistor (BRT), SC-88/SC70-6/SOT-363 6 LEAD, 3000-REEL Product overview: MUN5212DW1T1G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual. Search-friendly keywords include transistor, BJT, switching, amplification, Dual, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-MUN5212DW1T1G can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - MUN5212DW1T1G - 024603-MUN5212DW1T1G - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - MUN5212DW1T1G
024603-MUN5212DW1T1G
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - MUN5212DW1T1G 024603-MUN5212DW1T1G
Manufacturer: ON Semiconductor Win Source Part Number: 024603-MUN5212DW1T1G Packaging: Reel - TR Mounting: SMD (SMT) Transistor Polarity: 2 NPN - Pre-Biased (Dual) Resistor - Base (R1) (Ohms): 22k Resistor - Emitter Base (R2) (Ohms): 22k Categories: Discrete Semiconductor Products Status: Active Case / Package: SC-88/SC70-6/SOT-363 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 250mV @ 300μA, 10mA Collector Cut-off Current(Max): 500nA Typical Gain (hFE) (Min): 60 @ 5mA, 10V Maximum Power Dissipation: 250mW Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Balance

Manufacturer: ON Semiconductor
Win Source Part Number: 024603-MUN5212DW1T1G
Packaging: Reel - TR
Mounting: SMD (SMT)
Transistor Polarity: 2 NPN - Pre-Biased (Dual)
Resistor - Base (R1) (Ohms): 22k
Resistor - Emitter Base (R2) (Ohms): 22k
Categories: Discrete Semiconductor Products
Status: Active
Case / Package: SC-88/SC70-6/SOT-363
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 250mV @ 300μA, 10mA
Collector Cut-off Current(Max): 500nA
Typical Gain (hFE) (Min): 60 @ 5mA, 10V
Maximum Power Dissipation: 250mW
Popularity: Medium
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Brt Trans, Npn, 50V, Sot-363-3; Digital Transistor Polarity Onsemi - 82Y7022 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Brt Trans, Npn, 50V, Sot-363-3; Digital Transistor Polarity Onsemi
82Y7022
Brt Trans, Npn, 50V, Sot-363-3; Digital Transistor Polarity Onsemi 82Y7022
BRT TRANS, NPN, 50V, SOT-363-3; Digital Transistor Polarity:Dual NPN; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:22kohm; Base-Emitter Resistor R2:22kohm; Resistor Ratio, R1 /RoHS Compliant: Yes

BRT TRANS, NPN, 50V, SOT-363-3; Digital Transistor Polarity:Dual NPN; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:22kohm; Base-Emitter Resistor R2:22kohm; Resistor Ratio, R1 /RoHS Compliant: Yes

Supplier's Site Datasheet
Brt Transistor, 50Vdc, 22K/22K, Sot-363; Digital Transistor Polarity Onsemi - 51X6044 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Brt Transistor, 50Vdc, 22K/22K, Sot-363; Digital Transistor Polarity Onsemi
51X6044
Brt Transistor, 50Vdc, 22K/22K, Sot-363; Digital Transistor Polarity Onsemi 51X6044
BRT TRANSISTOR, 50VDC, 22K/22K, SOT-363; Digital Transistor Polarity:Dual NPN; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:22kohm; Base-Emitter Resistor R2:22kohm RoHS Compliant: Yes

BRT TRANSISTOR, 50VDC, 22K/22K, SOT-363; Digital Transistor Polarity:Dual NPN; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:22kohm; Base-Emitter Resistor R2:22kohm RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - MUN5212DW1T1G - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
MUN5212DW1T1G
Discrete Semiconductor Products - Transistors - Bipolar (BJT) MUN5212DW1T1G
TRANS 2NPN PREBIAS 0.25W SOT363

TRANS 2NPN PREBIAS 0.25W SOT363

Supplier's Site

Technical Specifications

  Rochester Electronics DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics Newark, An Avnet Company Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Bipolar RF Transistors Transistors Bipolar RF Transistors Transistors Transistors Transistors Bipolar RF Transistors
Product Number MUN5212DW1T1G MUN5212DW1T1GOSCT-ND 293-MUN5212DW1T1G 024603-MUN5212DW1T1G 82Y7022 51X6044 MUN5212DW1T1G
Product Name Bipolar Transistor Arrays, Pre-Biased Dual Bipolar Transistor TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - MUN5212DW1T1G Brt Trans, Npn, 50V, Sot-363-3; Digital Transistor Polarity Onsemi Brt Transistor, 50Vdc, 22K/22K, Sot-363; Digital Transistor Polarity Onsemi Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN NPN NPN; 2 NPN - Pre-Biased (Dual) NPN
Package Type SC-88-6-EUT-CPR 6-TSSOP, SC-88, SOT-363 SOT3; SC-88/SC70-6/SOT-363 TO-3; SOT3 TO-3; SOT3
Packing Method Tape Reel; Tape & Reel Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR
IC(max) 100 milliamps 100 milliamps
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