The NCD57256DR2G is an isolated dual-channel IGBT/MOSFET gate driver in a narrow body SOIC-16 package, designed for half-bridge, low-side, or independent channel configurations. It provides 3.5 A peak sourcing and sinking current per channel, 2.5 kV rms galvanic isolation between input and each output, and 1.5 kV rms isolation between outputs. The device supports 3.3 V to 20 V logic inputs and up to 32 V output supply voltages, with programmable dead time via an external resistor on the DT pin. It includes integrated under voltage lockout, short circuit clamping, and disable functionality. The part is AEC-Q100 qualified, RoHS compliant, and features a 1200 V working voltage per VDE 0884-11 requirements.
Half Bridge Based IGBT/MOSFET Driver
| Rochester Electronics | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | NCD57256DR2G |
| Package Type | SOIC-16 |
