onsemi NCP349MNTBG

Description
AND Gate Based MOSFET Driver, PDSO6
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Description
AND Gate Based MOSFET Driver, PDSO6
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Datasheet
Datasheet Summary
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The NCP349MNTBG is a positive overvoltage protection controller with an internal 65 mΩ NMOS FET, designed to disconnect the output from the input when the supply voltage exceeds 28 V or falls below the undervoltage threshold. It is packaged in a DFN6 1.6 mm × 2 mm surface-mount case with an exposed thermal pad connected to the input. The device includes overvoltage lockout at 5.68 V typical, undervoltage lockout at 2.95 V typical, and an open-drain FLAG output for fault signaling. It meets IEC 61000-4-2 ESD protection levels of 15 kV air and 8 kV contact when bypassed with a 1.0 µF capacitor, operates from -40°C to +85°C, and is RoHS compliant.

Datasheet Summary
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The NCP349MNTBG is a positive overvoltage protection controller with an internal 65 mΩ NMOS FET, designed to disconnect the output from the input when the supply voltage exceeds 28 V or falls below the undervoltage threshold. It is packaged in a DFN6 1.6 mm × 2 mm surface-mount case with an exposed thermal pad connected to the input. The device includes overvoltage lockout at 5.68 V typical, undervoltage lockout at 2.95 V typical, and an open-drain FLAG output for fault signaling. It meets IEC 61000-4-2 ESD protection levels of 15 kV air and 8 kV contact when bypassed with a 1.0 µF capacitor, operates from -40°C to +85°C, and is RoHS compliant.

Suppliers

Company
Product
Description
Supplier Links
 - NCP349MNTBG - Rochester Electronics
Newburyport, MA, United States
AND Gate Based MOSFET Driver, PDSO6

AND Gate Based MOSFET Driver, PDSO6

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number NCP349MNTBG
Package Type DFN6
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