onsemi NCP81078MNTBG

Description
NCP81078 - High Performance Dual MOSFET Gate Driver
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Description
NCP81078 - High Performance Dual MOSFET Gate Driver
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Datasheet
Datasheet Summary
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The NCP81078 is a high-performance dual MOSFET gate driver designed to drive half-bridge N-channel MOSFETs using a bootstrap technique. It is available in a 2x2 mm DFN8 package with an exposed pad connected to VSS. The device supports a floating high-side voltage up to 180 V, operates at switching frequencies up to 500 kHz, and features a fixed 135 ns internal dead-time to prevent shoot-through. It provides 1.0 A peak source and 0.9 A peak sink current, with 44 ns rising and 30 ns falling propagation delays. High-side and low-side under-voltage lockout protection is included. The operating junction temperature range is −40°C to 140°C.

Datasheet Summary
Powered by GS/AI

The NCP81078 is a high-performance dual MOSFET gate driver designed to drive half-bridge N-channel MOSFETs using a bootstrap technique. It is available in a 2x2 mm DFN8 package with an exposed pad connected to VSS. The device supports a floating high-side voltage up to 180 V, operates at switching frequencies up to 500 kHz, and features a fixed 135 ns internal dead-time to prevent shoot-through. It provides 1.0 A peak source and 0.9 A peak sink current, with 44 ns rising and 30 ns falling propagation delays. High-side and low-side under-voltage lockout protection is included. The operating junction temperature range is −40°C to 140°C.

Suppliers

Company
Product
Description
Supplier Links
 - NCP81078MNTBG - Rochester Electronics
Newburyport, MA, United States
NCP81078 - High Performance Dual MOSFET Gate Driver

NCP81078 - High Performance Dual MOSFET Gate Driver

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number NCP81078MNTBG
Package Type DFN8
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