NPN silicon planar epitaxial microwave power transistor in a SOT439A metal ceramic flange package with base connected to the flange, intended for broadband pulsed power amplification in the 960 to 1215 MHz range for TACAN applications. It has a maximum collector-base voltage of 65 V, collector current of 15 A under 10 ms pulses with 10% duty cycle, and peak total power dissipation of 690 W at a mounting base temperature of 75 °C. The device has a maximum junction temperature of 200 °C and a thermal resistance from junction to mounting base of 1.9 K/W under continuous operation. The package measures 16.5 mm in length, 12.85 mm in width, and 3.7 mm in height, with mounting screws at a 19 mm pitch and a maximum torque of 0.4 Nm. The product contains beryllium oxide and is not designed for life support applications.
NPN microwave power transistor
| Rochester Electronics | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | MX0912B251Y |
| Package Type | SOT439A2 |
