onsemi TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - MUN2113T1G MUN2113T1G

Description
Manufacturer: ON Semiconductor Win Source Part Number: 108089-MUN2113T1G Packaging: Reel - TR Mounting: SMD (SMT) Transistor Polarity: PNP - Pre-Biased Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): 47k Categories: Discrete Semiconductor Products Status: Active Case / Package: SC-59 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 250mV @ 300μA, 10mA Collector Cut-off Current(Max): 500nA Typical Gain (hFE) (Min): 80 @ 5mA, 10V Maximum Power Dissipation: 230mW Popularity: Medium Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Limited
Request a Quote Datasheet
Description
Manufacturer: ON Semiconductor Win Source Part Number: 108089-MUN2113T1G Packaging: Reel - TR Mounting: SMD (SMT) Transistor Polarity: PNP - Pre-Biased Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): 47k Categories: Discrete Semiconductor Products Status: Active Case / Package: SC-59 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 250mV @ 300μA, 10mA Collector Cut-off Current(Max): 500nA Typical Gain (hFE) (Min): 80 @ 5mA, 10V Maximum Power Dissipation: 230mW Popularity: Medium Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - MUN2113T1G - 108089-MUN2113T1G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - MUN2113T1G
108089-MUN2113T1G
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - MUN2113T1G 108089-MUN2113T1G
Manufacturer: ON Semiconductor Win Source Part Number: 108089-MUN2113T1G Packaging: Reel - TR Mounting: SMD (SMT) Transistor Polarity: PNP - Pre-Biased Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): 47k Categories: Discrete Semiconductor Products Status: Active Case / Package: SC-59 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 250mV @ 300μA, 10mA Collector Cut-off Current(Max): 500nA Typical Gain (hFE) (Min): 80 @ 5mA, 10V Maximum Power Dissipation: 230mW Popularity: Medium Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Limited

Manufacturer: ON Semiconductor
Win Source Part Number: 108089-MUN2113T1G
Packaging: Reel - TR
Mounting: SMD (SMT)
Transistor Polarity: PNP - Pre-Biased
Resistor - Base (R1) (Ohms): 47k
Resistor - Emitter Base (R2) (Ohms): 47k
Categories: Discrete Semiconductor Products
Status: Active
Case / Package: SC-59
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 250mV @ 300μA, 10mA
Collector Cut-off Current(Max): 500nA
Typical Gain (hFE) (Min): 80 @ 5mA, 10V
Maximum Power Dissipation: 230mW
Popularity: Medium
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single, Pre-Biased Bipolar Transistors - MUN2113T1G - ODG (Origin Data Global)
Shenzhen, China
Single, Pre-Biased Bipolar Transistors
MUN2113T1G
Single, Pre-Biased Bipolar Transistors MUN2113T1G
TRANS PREBIAS PNP 50V 100MA SC59

TRANS PREBIAS PNP 50V 100MA SC59

Supplier's Site Datasheet
 - MUN2113T1G - Rochester Electronics
Newburyport, MA, United States
PNP Bipolar Digital Transistor (BRT)

PNP Bipolar Digital Transistor (BRT)

Supplier's Site Datasheet
Single, Pre-Biased Bipolar Transistors - MUN2113T1GOSCT-ND - DigiKey
Thief River Falls, MN, United States
Single, Pre-Biased Bipolar Transistors
MUN2113T1GOSCT-ND
Single, Pre-Biased Bipolar Transistors MUN2113T1GOSCT-ND
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 230mW Surface Mount SC-59

Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 230mW Surface Mount SC-59

Buy Now Datasheet
Single, Pre-Biased Bipolar Transistors - MUN2113T1GOSDKR-ND - DigiKey
Thief River Falls, MN, United States
Single, Pre-Biased Bipolar Transistors
MUN2113T1GOSDKR-ND
Single, Pre-Biased Bipolar Transistors MUN2113T1GOSDKR-ND
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 230mW Surface Mount SC-59

Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 230mW Surface Mount SC-59

Buy Now Datasheet
Single, Pre-Biased Bipolar Transistors - MUN2113T1GOSTR-ND - DigiKey
Thief River Falls, MN, United States
Single, Pre-Biased Bipolar Transistors
MUN2113T1GOSTR-ND
Single, Pre-Biased Bipolar Transistors MUN2113T1GOSTR-ND
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 230mW Surface Mount SC-59

Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 230mW Surface Mount SC-59

Buy Now Datasheet
Singapore
50V 100mA Bipolar Transistor
292-MUN2113T1G
50V 100mA Bipolar Transistor 292-MUN2113T1G
PNP BJT Transistor, 50V VCEO, 100mA IC, SC Package Product overview: MUN2113T1G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, 100mA. Search-friendly keywords include transistor, BJT, switching, amplification, 50V, 100mA, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-MUN2113T1G can be used for catalog matching and distributor lookup.

PNP BJT Transistor, 50V VCEO, 100mA IC, SC Package Product overview: MUN2113T1G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, 100mA. Search-friendly keywords include transistor, BJT, switching, amplification, 50V, 100mA, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-MUN2113T1G can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Brt Transistor, 50V, 47K/47Kohm, Sc-59, Full Reel; Digital Transistor Polarity Onsemi - 67H6952 - Newark, An Avnet Company
Chicago, IL, United States
Brt Transistor, 50V, 47K/47Kohm, Sc-59, Full Reel; Digital Transistor Polarity Onsemi
67H6952
Brt Transistor, 50V, 47K/47Kohm, Sc-59, Full Reel; Digital Transistor Polarity Onsemi 67H6952
BRT TRANSISTOR, 50V, 47K/47KOHM, SC-59, FULL REEL; Digital Transistor Polarity:Single PNP; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:47kohm; Base-Emitter Resistor R2:47kohm RoHS Compliant: Yes

BRT TRANSISTOR, 50V, 47K/47KOHM, SC-59, FULL REEL; Digital Transistor Polarity:Single PNP; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:47kohm; Base-Emitter Resistor R2:47kohm RoHS Compliant: Yes

Supplier's Site
Brt Trans, 50V, 47K/47Kohm, Sc-59; Digital Transistor Polarity Onsemi - 09R9558 - Newark, An Avnet Company
Chicago, IL, United States
Brt Trans, 50V, 47K/47Kohm, Sc-59; Digital Transistor Polarity Onsemi
09R9558
Brt Trans, 50V, 47K/47Kohm, Sc-59; Digital Transistor Polarity Onsemi 09R9558
BRT TRANS, 50V, 47K/47KOHM, SC-59; Digital Transistor Polarity:Single PNP; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:47kohm; Base-Emitter Resistor R2:47kohm; MSL:- RoHS Compliant: Yes

BRT TRANS, 50V, 47K/47KOHM, SC-59; Digital Transistor Polarity:Single PNP; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:47kohm; Base-Emitter Resistor R2:47kohm; MSL:- RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - MUN2113T1G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
MUN2113T1G
Discrete Semiconductor Products - Transistors - Bipolar (BJT) MUN2113T1G
TRANS PREBIAS PNP 50V 0.1A SC59

TRANS PREBIAS PNP 50V 0.1A SC59

Supplier's Site

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) Rochester Electronics DigiKey ERSAELECTRONICS PTE. LTD. Newark, An Avnet Company Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Bipolar RF Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors Transistors Transistors Bipolar RF Transistors
Product Number 108089-MUN2113T1G MUN2113T1G MUN2113T1G MUN2113T1GOSCT-ND 292-MUN2113T1G 67H6952 09R9558 MUN2113T1G
Product Name TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - MUN2113T1G Single, Pre-Biased Bipolar Transistors Single, Pre-Biased Bipolar Transistors 50V 100mA Bipolar Transistor Brt Transistor, 50V, 47K/47Kohm, Sc-59, Full Reel; Digital Transistor Polarity Onsemi Brt Trans, 50V, 47K/47Kohm, Sc-59; Digital Transistor Polarity Onsemi Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity PNP; PNP - Pre-Biased PNP - Pre-Biased; PNP PNP PNP PNP
Package Type SOT3; SC-59 SOT23; TO-236-3, SC-59, SOT-23-3 SC-59 3 LEAD SOT23; TO-236-3, SC-59, SOT-23-3 TO-3 TO-3
IC(max) 100 milliamps 100 milliamps 100 milliamps
VCEO 50 volts 50 volts 50 volts
Output Power 0.2300 watts
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