This device is designed for use in VHF/UHF communications, VHF TV broadcast and aerospace applications as well as industrial, scientific and medical applications. The device is exceptionally rugged and exhibits high performance up to 250 MHz.
RF MOSFET LDMOS 50V TO220-3 Product overview: MRF101AN from NXP Semiconductors is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 50V, TO220, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-MRF101AN can be used for catalog matching and distributor lookup.
RF Power Field-Effect Transistor
RF Mosfet LDMOS 50V 100mA 1.8MHz ~ 250MHz 21.1dB 115W TO-220-3
RF TRANSISTOR 100W TO-220
RF MOSFET LDMOS 50V TO220-3
| Richardson RFPD | ERSAELECTRONICS PTE. LTD. | Rochester Electronics | DigiKey | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Transistors | RF MOSFET Transistors | RF Transistors |
| Product Number | MRF101AN | 285-MRF101AN | MRF101AN | 568-14751-ND | MRF101AN | MRF101AN |
| Product Name | RF Power Transistor | 50V TO220 MOSFET Transistor | RF FETs, MOSFETs | RF FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | |
| Package Type | Plastic Through-Hole | Tube | SIL3 | TO-220; TO-220-3 | TO-220; TO-220-3 | |
| Power Gain | 23 dB | 21.1 dB | ||||
| Output Power | 100 watts | |||||
| Operating Frequency | 1.8 to 250 MHz | 1.8 to 250 MHz | ||||
| Polarity | N-Channel |
