Panasonic MUN2235T1G

Description
NPN Bipolar Digital Transistor (BRT)
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Description
NPN Bipolar Digital Transistor (BRT)
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Datasheet
Datasheet Summary
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NPN digital transistor with integrated bias resistors (R1 = 2.2 kΩ, R2 = 47 kΩ) in an SC-59 package, designed to replace discrete transistor and resistor networks. It has a collector-base voltage rating of 50 V, collector-emitter voltage of 50 V, and continuous collector current of 100 mA. The device dissipates 230 mW at 25°C ambient temperature with a derating of 1.8 mW/°C and a junction-to-ambient thermal resistance of 540 °C/W. Operating junction and storage temperature range is -55°C to +150°C. It is Pb-free, halogen-free, RoHS compliant, and AEC-Q101 qualified.

Datasheet Summary
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NPN digital transistor with integrated bias resistors (R1 = 2.2 kΩ, R2 = 47 kΩ) in an SC-59 package, designed to replace discrete transistor and resistor networks. It has a collector-base voltage rating of 50 V, collector-emitter voltage of 50 V, and continuous collector current of 100 mA. The device dissipates 230 mW at 25°C ambient temperature with a derating of 1.8 mW/°C and a junction-to-ambient thermal resistance of 540 °C/W. Operating junction and storage temperature range is -55°C to +150°C. It is Pb-free, halogen-free, RoHS compliant, and AEC-Q101 qualified.

Suppliers

Company
Product
Description
Supplier Links
 - MUN2235T1G - Rochester Electronics
Newburyport, MA, United States
NPN Bipolar Digital Transistor (BRT)

NPN Bipolar Digital Transistor (BRT)

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category Bipolar RF Transistors
Product Number MUN2235T1G
Polarity NPN
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