onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - NDS9430 NDS9430

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 121048-NDS9430 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 2.5W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 5.3A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 14nC @ 10V Max Input Capacitance: 528pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 60 mOhm @ 5.3A, 10V Popularity: Medium Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Balance Application Field: Used in Power Management, Consumer Electronics
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - NDS9430 - 121048-NDS9430 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - NDS9430TR-ND - DigiKey
    DigiKey
  • NDS9430 - Rochester Electronics
    Rochester Electronics
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NDS9430 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 121048-NDS9430 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 2.5W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 5.3A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 14nC @ 10V Max Input Capacitance: 528pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 60 mOhm @ 5.3A, 10V Popularity: Medium Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Balance Application Field: Used in Power Management, Consumer Electronics
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NDS9430 - 121048-NDS9430 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NDS9430
121048-NDS9430
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NDS9430 121048-NDS9430
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 121048-NDS9430 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 2.5W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 5.3A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 14nC @ 10V Max Input Capacitance: 528pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 60 mOhm @ 5.3A, 10V Popularity: Medium Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Balance Application Field: Used in Power Management, Consumer Electronics

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 121048-NDS9430
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2.5W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 5.3A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 14nC @ 10V
Max Input Capacitance: 528pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 60 mOhm @ 5.3A, 10V
Popularity: Medium
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Balance
Application Field: Used in Power Management, Consumer Electronics

Buy Now Datasheet
Single FETs, MOSFETs - NDS9430TR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
NDS9430TR-ND
Single FETs, MOSFETs NDS9430TR-ND
P-Channel 30V 5.3A (Ta) 2.5W (Ta) Surface Mount 8-SOIC

P-Channel 30V 5.3A (Ta) 2.5W (Ta) Surface Mount 8-SOIC

Buy Now Datasheet
- NDS9430 - Rochester Electronics
Rochester Electronics
Newburyport, MA, United States
NDS9430
NDS9430
Small Signal Field-Effect Transistor, 5.3A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

Small Signal Field-Effect Transistor, 5.3A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NDS9430 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
NDS9430
Discrete Semiconductor Products - Transistors - FETs, MOSFETs NDS9430
MOSFET P-CH 30V 5.3A 8SOIC

MOSFET P-CH 30V 5.3A 8SOIC

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Rochester Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF MOSFET Transistors RF Transistors
Product Number 121048-NDS9430 NDS9430TR-ND NDS9430 NDS9430
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - NDS9430 Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel; P-Channel P-Channel P-Channel
V(BR)DSS 30 volts
PD 2500 milliwatts
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