Renesas Electronics Corporation Discrete Semiconductor Products - Transistors - FETs, MOSFETs NE3517S03-T1D-A

Description
RF Small Signal Field-Effect Transistor, K Band, Gallium Arsenide, N-Channel, Hetero-junction FET
Request a Quote Datasheet
Description
RF Small Signal Field-Effect Transistor, K Band, Gallium Arsenide, N-Channel, Hetero-junction FET
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
 - NE3517S03-T1D-A - Rochester Electronics
Newburyport, MA, United States
RF Small Signal Field-Effect Transistor, K Band, Gallium Arsenide, N-Channel, Hetero-junction FET

RF Small Signal Field-Effect Transistor, K Band, Gallium Arsenide, N-Channel, Hetero-junction FET

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NE3517S03-T1D-A - Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
NE3517S03-T1D-A
Discrete Semiconductor Products - Transistors - FETs, MOSFETs NE3517S03-T1D-A
RF MOSFET HFET 2V S03

RF MOSFET HFET 2V S03

Supplier's Site

Technical Specifications

  Rochester Electronics Acme Chip Technology Co., Limited
Product Category RF MOSFET Transistors RF Transistors
Product Number NE3517S03-T1D-A NE3517S03-T1D-A
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel
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