Rochester Electronics TRANSISTORS - Transistors - FETs, MOSFETs - RF - MTP1N50E MTP1N50E

The MTP1N50E is an N-channel power MOSFET for high-voltage switching in power supplies and motor controls. It is packaged in a TO-220AB case measuring 15.75 mm maximum length, 10.28 mm width, and 6.47 mm height. It has a 500 V drain-source breakdown voltage and a continuous drain current of 1.0 A at 25°C (0.8 A at 100°C). Maximum power dissipation is 40 W with a thermal resistance of 3.13°C/W from junction to case. The on-resistance is up to 5.0 Ω at 10 V gate drive. It supports single-pulse avalanche energy of 45 mJ and has a source-to-drain diode with 145 ns reverse recovery time. Operating junction temperature ranges from -55°C to 150°C. The part is AEC-Q200 qualified and RoHS compliant.