onsemi NCV5701CDR2G

The NCV5701C is a high-current, standalone IGBT gate driver with separate high and low output pins (VOH and VOL) for improved system design flexibility. It is packaged in an 8-pin SOIC with dimensions of 4.80-5.00 mm in height, 3.80-4.00 mm in width, and 5.80-6.20 mm in length. The device supports a wide bias voltage range from UVLO to 20 V, features active desaturation protection with programmable blanking delay, accurate under-voltage lockout (UVLO) with 1.0 V hysteresis, and a 5.0 V reference output capable of sourcing 20 mA. It delivers peak source and sink currents of up to 7.8 A and 6.8 A, respectively, and has propagation delay distortion of ±25 °C. The part is AEC-Q100 qualified, RoHS compliant, Pb-free, and rated for operation from -40°C to 125°C ambient temperature. Thermal shutdown activates at 188°C with 33°C hysteresis. The SOIC-8 package is rated for reflow soldering with MSL 1 moisture sensitivity.