Dual PNP Bipolar Digital Transistor (BRT)
Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 250mW Surface Mount SC-88/SC70-6/SOT-363
Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 250mW Surface Mount SC-88/SC70-6/SOT-363
Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 250mW Surface Mount SC-88/SC70-6/SOT-363
Dual PNP BJT Transistor, 50V, 100mA, SOT-363-6 Product overview: MUN5111DW1T1G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual, 50V, 100mA. Search-friendly keywords include transistor, BJT, switching, amplification, Dual, 50V, 100mA, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-MUN5111DW1T1G can be used for catalog matching and distributor lookup.
TRANS PREBIAS 2PNP 50V SC88
Manufacturer: ON Semiconductor
Win Source Part Number: 059663-MUN5111DW1T1G
Packaging: Reel - TR
Mounting: SMD (SMT)
Transistor Polarity: 2 PNP (Dual)
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SC-88/SC70-6/SOT-363
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 250mV @ 300nA, 10mA
Collector Cut-off Current(Max): 500nA
Typical Gain (hFE) (Min): 35 @ 5mA, 10V
Maximum Power Dissipation: 385mW
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Balance
TRANS PREBIAS 2PNP 50V SC88
BRT TRANS, PNP, -50V, SOT363-6; Digital Transistor Polarity:Dual PNP; Collector Emitter Voltage V(br)ceo:-50V; Continuous Collector Current Ic:-100mA; Base Input Resistor R1:10kohm; Base-Emitter Resistor R2:10kohm; Resistor Ratio, R1RoHS Compliant: Yes
| Rochester Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Bipolar RF Transistors | Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Transistors | Bipolar RF Transistors | Transistors |
| Product Number | MUN5111DW1T1G | MUN5111DW1T1GOSDKR-ND | 293-MUN5111DW1T1G | MUN5111DW1T1G | 059663-MUN5111DW1T1G | MUN5111DW1T1G | 82Y7021 |
| Product Name | Bipolar Transistor Arrays, Pre-Biased | Dual 50V 100mA Bipolar Transistor | Bipolar Transistor Arrays, Pre-Biased | TRANSISTORS - Transistors (BJT) - Arrays - MUN5111DW1T1G | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | Brt Trans, Pnp, -50V, Sot363-6; Digital Transistor Polarity Onsemi | |
| Polarity | PNP | PNP | PNP | 2 PNP - Pre-Biased (Dual); PNP | PNP; 2 PNP (Dual) | PNP | |
| Package Type | SC-88/SC70-6/SOT-363 6 LEAD | 6-TSSOP, SC-88, SOT-363 | 6-TSSOP, SC-88, SOT-363 | SOT3; SC-88/SC70-6/SOT-363 | TO-3 | ||
| Packing Method | Tape Reel; Tape & Reel | Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR | |||||
| IC(max) | 100 milliamps | 100 milliamps | 100 milliamps | ||||
| VCEO | 50 volts | 50 volts | 50 volts |
