onsemi TRANSISTORS - Transistors (BJT) - Arrays - MUN5111DW1T1G MUN5111DW1T1G

Description
Manufacturer: ON Semiconductor Win Source Part Number: 059663-MUN5111DW1T1G Packaging: Reel - TR Mounting: SMD (SMT) Transistor Polarity: 2 PNP (Dual) Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SC-88/SC70-6/SOT-363 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 250mV @ 300nA, 10mA Collector Cut-off Current(Max): 500nA Typical Gain (hFE) (Min): 35 @ 5mA, 10V Maximum Power Dissipation: 385mW Popularity: Medium Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Balance
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Description
Manufacturer: ON Semiconductor Win Source Part Number: 059663-MUN5111DW1T1G Packaging: Reel - TR Mounting: SMD (SMT) Transistor Polarity: 2 PNP (Dual) Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SC-88/SC70-6/SOT-363 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 250mV @ 300nA, 10mA Collector Cut-off Current(Max): 500nA Typical Gain (hFE) (Min): 35 @ 5mA, 10V Maximum Power Dissipation: 385mW Popularity: Medium Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Balance
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors (BJT) - Arrays - MUN5111DW1T1G - 059663-MUN5111DW1T1G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Arrays - MUN5111DW1T1G
059663-MUN5111DW1T1G
TRANSISTORS - Transistors (BJT) - Arrays - MUN5111DW1T1G 059663-MUN5111DW1T1G
Manufacturer: ON Semiconductor Win Source Part Number: 059663-MUN5111DW1T1G Packaging: Reel - TR Mounting: SMD (SMT) Transistor Polarity: 2 PNP (Dual) Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SC-88/SC70-6/SOT-363 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 250mV @ 300nA, 10mA Collector Cut-off Current(Max): 500nA Typical Gain (hFE) (Min): 35 @ 5mA, 10V Maximum Power Dissipation: 385mW Popularity: Medium Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Balance

Manufacturer: ON Semiconductor
Win Source Part Number: 059663-MUN5111DW1T1G
Packaging: Reel - TR
Mounting: SMD (SMT)
Transistor Polarity: 2 PNP (Dual)
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SC-88/SC70-6/SOT-363
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 250mV @ 300nA, 10mA
Collector Cut-off Current(Max): 500nA
Typical Gain (hFE) (Min): 35 @ 5mA, 10V
Maximum Power Dissipation: 385mW
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
 - MUN5111DW1T1G - Rochester Electronics
Newburyport, MA, United States
Dual PNP Bipolar Digital Transistor (BRT)

Dual PNP Bipolar Digital Transistor (BRT)

Supplier's Site Datasheet
Bipolar Transistor Arrays, Pre-Biased - MUN5111DW1T1G - ODG (Origin Data Global)
Shenzhen, China
Bipolar Transistor Arrays, Pre-Biased
MUN5111DW1T1G
Bipolar Transistor Arrays, Pre-Biased MUN5111DW1T1G
TRANS PREBIAS 2PNP 50V SC88

TRANS PREBIAS 2PNP 50V SC88

Supplier's Site Datasheet
Singapore
Dual 50V 100mA Bipolar Transistor
293-MUN5111DW1T1G
Dual 50V 100mA Bipolar Transistor 293-MUN5111DW1T1G
Dual PNP BJT Transistor, 50V, 100mA, SOT-363-6 Product overview: MUN5111DW1T1G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual, 50V, 100mA. Search-friendly keywords include transistor, BJT, switching, amplification, Dual, 50V, 100mA, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-MUN5111DW1T1G can be used for catalog matching and distributor lookup.

Dual PNP BJT Transistor, 50V, 100mA, SOT-363-6 Product overview: MUN5111DW1T1G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual, 50V, 100mA. Search-friendly keywords include transistor, BJT, switching, amplification, Dual, 50V, 100mA, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-MUN5111DW1T1G can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Bipolar Transistor Arrays, Pre-Biased - MUN5111DW1T1GOSDKR-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays, Pre-Biased
MUN5111DW1T1GOSDKR-ND
Bipolar Transistor Arrays, Pre-Biased MUN5111DW1T1GOSDKR-ND
Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 250mW Surface Mount SC-88/SC70-6/SOT-363

Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 250mW Surface Mount SC-88/SC70-6/SOT-363

Buy Now Datasheet
Bipolar Transistor Arrays, Pre-Biased - MUN5111DW1T1GOSTR-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays, Pre-Biased
MUN5111DW1T1GOSTR-ND
Bipolar Transistor Arrays, Pre-Biased MUN5111DW1T1GOSTR-ND
Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 250mW Surface Mount SC-88/SC70-6/SOT-363

Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 250mW Surface Mount SC-88/SC70-6/SOT-363

Buy Now Datasheet
Bipolar Transistor Arrays, Pre-Biased - MUN5111DW1T1GOSCT-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays, Pre-Biased
MUN5111DW1T1GOSCT-ND
Bipolar Transistor Arrays, Pre-Biased MUN5111DW1T1GOSCT-ND
Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 250mW Surface Mount SC-88/SC70-6/SOT-363

Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 250mW Surface Mount SC-88/SC70-6/SOT-363

Buy Now Datasheet
Brt Trans, Pnp, -50V, Sot363-6; Digital Transistor Polarity Onsemi - 82Y7021 - Newark, An Avnet Company
Chicago, IL, United States
Brt Trans, Pnp, -50V, Sot363-6; Digital Transistor Polarity Onsemi
82Y7021
Brt Trans, Pnp, -50V, Sot363-6; Digital Transistor Polarity Onsemi 82Y7021
BRT TRANS, PNP, -50V, SOT363-6; Digital Transistor Polarity:Dual PNP; Collector Emitter Voltage V(br)ceo:-50V; Continuous Collector Current Ic:-100mA; Base Input Resistor R1:10kohm; Base-Emitter Resistor R2:10kohm; Resistor Ratio, R1RoHS Compliant: Yes

BRT TRANS, PNP, -50V, SOT363-6; Digital Transistor Polarity:Dual PNP; Collector Emitter Voltage V(br)ceo:-50V; Continuous Collector Current Ic:-100mA; Base Input Resistor R1:10kohm; Base-Emitter Resistor R2:10kohm; Resistor Ratio, R1RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - MUN5111DW1T1G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
MUN5111DW1T1G
Discrete Semiconductor Products - Transistors - Bipolar (BJT) MUN5111DW1T1G
TRANS PREBIAS 2PNP 50V SC88

TRANS PREBIAS 2PNP 50V SC88

Supplier's Site

Technical Specifications

  Win Source Electronics Rochester Electronics ODG (Origin Data Global) ERSAELECTRONICS PTE. LTD. DigiKey Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors Transistors Transistors Bipolar RF Transistors
Product Number 059663-MUN5111DW1T1G MUN5111DW1T1G MUN5111DW1T1G 293-MUN5111DW1T1G MUN5111DW1T1GOSDKR-ND 82Y7021 MUN5111DW1T1G
Product Name TRANSISTORS - Transistors (BJT) - Arrays - MUN5111DW1T1G Bipolar Transistor Arrays, Pre-Biased Dual 50V 100mA Bipolar Transistor Bipolar Transistor Arrays, Pre-Biased Brt Trans, Pnp, -50V, Sot363-6; Digital Transistor Polarity Onsemi Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity PNP; 2 PNP (Dual) PNP 2 PNP - Pre-Biased (Dual); PNP PNP PNP PNP
Package Type SOT3; SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363 6 LEAD 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 TO-3
Packing Method Tape Reel; Tape & Reel Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR
IC(max) 100 milliamps 100 milliamps 100 milliamps
VCEO 50 volts 50 volts 50 volts
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