onsemi NCD5701BDR2G

The NCD5701B is a high-current IGBT gate driver in an 8-pin SOIC package, designed for applications such as solar inverters, motor control, and uninterruptible power supplies. It features a negative output voltage capability (VEE) for enhanced IGBT turn-off performance, under-voltage lockout (UVLO) with hysteresis, desaturation protection with programmable blanking delay, and an active-low FAULT output. The device provides peak source and sink currents of 7.8 A and 6.8 A, respectively, with propagation delay distortion of ±25 ns over temperature. It operates with a positive supply voltage from UVLO to 20 V and a negative supply voltage from -15 V to 0 V. The part is Pb-free, halogen-free, and RoHS compliant, meets AEC-Q200 for ESD protection, and has a maximum junction temperature of 150°C. Thermal shutdown activates at 188°C with 33°C hysteresis.