Rochester Electronics TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - MUN2113T1 MUN2113T1

The MUN2113T1 is a PNP silicon surface mount transistor with an integrated monolithic bias resistor network, designed to replace a transistor and external bias resistors, reducing component count and board space. It is housed in the SC-59 package, measuring 3.10 mm maximum length, 2.90 mm maximum width, and 1.30 mm maximum height. The device has a collector-emitter voltage rating of 50 V, a collector current rating of 100 mA, and a total device dissipation of 230 mW at 25°C. It features a DC current gain of 80 to 140 at VCE = 10 V and IC = 5.0 mA, a collector-emitter saturation voltage of 0.25 V at IC = 10 mA and IB = 0.3 mA, and input and base-emitter resistors R1 and R2 both valued at 47 kΩ. The junction and storage temperature range is -55°C to +150°C. The part is AEC-Q101 qualified and Pb-free options are available.