Rochester Electronics TRANSISTORS - Transistors - FETs, MOSFETs - RF - MTY30N50E MTY30N50E

The MTY30N50E is an N-channel power MOSFET designed for high voltage, high speed switching applications in power supplies, converters, and PWM motor controls. It is packaged in a TO-264 case with dimensions of 28.0 to 29.0 mm in length, 19.3 to 20.3 mm in width, and 4.7 to 5.3 mm in thickness. The device has a drain-source voltage rating of 500 Vdc, a continuous drain current of 30 Adc at 25°C, and a total power dissipation of 300 W. It features a maximum on-resistance of 0.15 ohms at 15 A and 10 V gate-source voltage, and is rated for avalanche energy of 3000 mJ at a starting junction temperature of 25°C. Thermal resistance from junction to case is 0.42°C/W. The device meets AEC-Q200 automotive qualification standards and is RoHS compliant. Its operating and storage temperature range is from -55°C to 150°C.