Rochester Electronics TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - MUN5112DW1T1G MUN5112DW1T1G

The MUN5112DW1T1G is a dual PNP bias resistor transistor in the SOT-363 package, designed to replace a single transistor with an external resistor network, reducing component count and board space. It integrates two PNP transistors each with a 22 kΩ series base resistor and a 22 kΩ base-emitter resistor. The device has a collector-emitter voltage rating of 50 V, continuous collector current of 100 mA, and total device dissipation of 187 mW at 25°C with minimum pad, derating at 1.5 mW/°C. Thermal resistance junction-to-ambient is 670 °C/W. It is AEC-Q101 qualified, RoHS compliant, and Pb-free. Junction and storage temperature range is -55°C to +150°C.