onsemi Single Bipolar Transistors MSB709-RT1

Description
Bipolar (BJT) Transistor PNP 45V 100mA 200mW Surface Mount SC-59
  • Single Bipolar Transistors - MSB709-RT1OS-ND - DigiKey
    DigiKey
  • TRANSISTORS - Transistors (BJT) - Single - MSB709-RT1 - 097485-MSB709-RT1 - Win Source Electronics
    Win Source Electronics
  • MSB709-RT1 - Rochester Electronics
    Rochester Electronics
  • Discrete Semiconductor Products - Transistors - Bipolar (BJT) - MSB709-RT1 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Bipolar (BJT) Transistor PNP 45V 100mA 200mW Surface Mount SC-59
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single Bipolar Transistors - MSB709-RT1OS-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
MSB709-RT1OS-ND
Single Bipolar Transistors MSB709-RT1OS-ND
Bipolar (BJT) Transistor PNP 45V 100mA 200mW Surface Mount SC-59

Bipolar (BJT) Transistor PNP 45V 100mA 200mW Surface Mount SC-59

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Single - MSB709-RT1 - 097485-MSB709-RT1 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - MSB709-RT1
097485-MSB709-RT1
TRANSISTORS - Transistors (BJT) - Single - MSB709-RT1 097485-MSB709-RT1
Manufacturer: ON Semiconductor Win Source Part Number: 097485-MSB709-RT1 Packaging: Reel - TR Mounting: SMD (SMT) Transistor Polarity: PNP Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: SC-59 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 45V Max Vce (sat): 500mV @ 10mA, 100mA Collector Cut-off Current(Max): 100nA Typical Gain (hFE) (Min): 210 @ 2mA, 10V Maximum Power Dissipation: 200mW

Manufacturer: ON Semiconductor
Win Source Part Number: 097485-MSB709-RT1
Packaging: Reel - TR
Mounting: SMD (SMT)
Transistor Polarity: PNP
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: SC-59
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 45V
Max Vce (sat): 500mV @ 10mA, 100mA
Collector Cut-off Current(Max): 100nA
Typical Gain (hFE) (Min): 210 @ 2mA, 10V
Maximum Power Dissipation: 200mW

Buy Now Datasheet
- MSB709-RT1 - Rochester Electronics
Rochester Electronics
Newburyport, MA, United States
MSB709-RT1
MSB709-RT1
PNP Bipolar Transistor

PNP Bipolar Transistor

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - MSB709-RT1 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
MSB709-RT1
Discrete Semiconductor Products - Transistors - Bipolar (BJT) MSB709-RT1
TRANS PNP 45V 0.1A SC59

TRANS PNP 45V 0.1A SC59

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Rochester Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number MSB709-RT1OS-ND 097485-MSB709-RT1 MSB709-RT1 MSB709-RT1
Product Name Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - MSB709-RT1 Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity PNP PNP; PNP PNP
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