onsemi Bipolar Transistor Arrays, Pre-Biased MUN5235DW1T1G

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TRANS 2NPN PREBIAS 0.25W SOT363
Request a Quote Datasheet
Description
TRANS 2NPN PREBIAS 0.25W SOT363
Request a Quote Datasheet

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Product
Description
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Bipolar Transistor Arrays, Pre-Biased - MUN5235DW1T1G - ODG (Origin Data Global)
Shenzhen, China
Bipolar Transistor Arrays, Pre-Biased
MUN5235DW1T1G
Bipolar Transistor Arrays, Pre-Biased MUN5235DW1T1G
TRANS 2NPN PREBIAS 0.25W SOT363

TRANS 2NPN PREBIAS 0.25W SOT363

Supplier's Site Datasheet
Bipolar Transistor Arrays, Pre-Biased - MUN5235DW1T1GOSDKR-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays, Pre-Biased
MUN5235DW1T1GOSDKR-ND
Bipolar Transistor Arrays, Pre-Biased MUN5235DW1T1GOSDKR-ND
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250mW Surface Mount SC-88/SC70-6/SOT-363

Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250mW Surface Mount SC-88/SC70-6/SOT-363

Buy Now Datasheet
Bipolar Transistor Arrays, Pre-Biased - MUN5235DW1T1GOSTR-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays, Pre-Biased
MUN5235DW1T1GOSTR-ND
Bipolar Transistor Arrays, Pre-Biased MUN5235DW1T1GOSTR-ND
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250mW Surface Mount SC-88/SC70-6/SOT-363

Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250mW Surface Mount SC-88/SC70-6/SOT-363

Buy Now Datasheet
Bipolar Transistor Arrays, Pre-Biased - MUN5235DW1T1GOSCT-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays, Pre-Biased
MUN5235DW1T1GOSCT-ND
Bipolar Transistor Arrays, Pre-Biased MUN5235DW1T1GOSCT-ND
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250mW Surface Mount SC-88/SC70-6/SOT-363

Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250mW Surface Mount SC-88/SC70-6/SOT-363

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - MUN5235DW1T1G - 024614-MUN5235DW1T1G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - MUN5235DW1T1G
024614-MUN5235DW1T1G
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - MUN5235DW1T1G 024614-MUN5235DW1T1G
Manufacturer: ON Semiconductor Win Source Part Number: 024614-MUN5235DW1T1G Packaging: Reel - TR Mounting: SMD (SMT) Transistor Polarity: 2 NPN - Pre-Biased (Dual) Family Name: MUN5235DW1 Resistor - Base (R1) (Ohms): 2.2k Resistor - Emitter Base (R2) (Ohms): 47k Categories: Discrete Semiconductor Products Status: Active Case / Package: SC-88/SC70-6/SOT-363 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 250mV @ 300μA, 10mA Collector Cut-off Current(Max): 500nA Typical Gain (hFE) (Min): 80 @ 5mA, 10V Maximum Power Dissipation: 250mW Alternative Parts (Cross-Reference): SMUN5235DW1T1G; SMUN5235DW1T3G; RN1905(TE85L,F); BCR 108S E6327; Introduction Date: November 25, 1996 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2029 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Sufficient

Manufacturer: ON Semiconductor
Win Source Part Number: 024614-MUN5235DW1T1G
Packaging: Reel - TR
Mounting: SMD (SMT)
Transistor Polarity: 2 NPN - Pre-Biased (Dual)
Family Name: MUN5235DW1
Resistor - Base (R1) (Ohms): 2.2k
Resistor - Emitter Base (R2) (Ohms): 47k
Categories: Discrete Semiconductor Products
Status: Active
Case / Package: SC-88/SC70-6/SOT-363
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 250mV @ 300μA, 10mA
Collector Cut-off Current(Max): 500nA
Typical Gain (hFE) (Min): 80 @ 5mA, 10V
Maximum Power Dissipation: 250mW
Alternative Parts (Cross-Reference): SMUN5235DW1T1G; SMUN5235DW1T3G; RN1905(TE85L,F); BCR 108S E6327;
Introduction Date: November 25, 1996
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2029
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
 - MUN5235DW1T1G - Rochester Electronics
Newburyport, MA, United States
Dual NPN Bipolar Digital Transistor (BRT)

Dual NPN Bipolar Digital Transistor (BRT)

Supplier's Site Datasheet
Singapore
Dual 50V 100mA Bipolar Transistor
293-MUN5235DW1T1G
Dual 50V 100mA Bipolar Transistor 293-MUN5235DW1T1G
Dual NPN BJT Transistor, 50V, 100mA, SOT-363-6 Product overview: MUN5235DW1T1G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual, 50V, 100mA. Search-friendly keywords include transistor, BJT, switching, amplification, Dual, 50V, 100mA, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-MUN5235DW1T1G can be used for catalog matching and distributor lookup.

Dual NPN BJT Transistor, 50V, 100mA, SOT-363-6 Product overview: MUN5235DW1T1G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual, 50V, 100mA. Search-friendly keywords include transistor, BJT, switching, amplification, Dual, 50V, 100mA, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-MUN5235DW1T1G can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Bipolar Transistors - 7916242P - RS Components, Ltd.
Corby, Northants, United Kingdom
Bipolar Transistors
7916242P
Bipolar Transistors 7916242P
Dual Dig. Transistor NPN 4.7k 47k SOT363

Dual Dig. Transistor NPN 4.7k 47k SOT363

Supplier's Site
Bipolar Transistors - 7916242 - RS Components, Ltd.
Corby, Northants, United Kingdom
Bipolar Transistors
7916242
Bipolar Transistors 7916242
Dual Dig. Transistor NPN 4.7k 47k SOT363

Dual Dig. Transistor NPN 4.7k 47k SOT363

Supplier's Site
Bipolar Transistors - 1453577 - RS Components, Ltd.
Corby, Northants, United Kingdom
Bipolar Transistors
1453577
Bipolar Transistors 1453577
Dual Dig. Transistor NPN 4.7k 47k SOT363

Dual Dig. Transistor NPN 4.7k 47k SOT363

Supplier's Site
Sheung Wan, Hong Kong
Bipolar Transistors - Pre-Biased
MUN5235DW1T1G
Bipolar Transistors - Pre-Biased MUN5235DW1T1G
Bipolar Transistors - Pre-Biased 100mA 50V BRT Dual NPN

Bipolar Transistors - Pre-Biased 100mA 50V BRT Dual NPN

Buy Now Datasheet
Brt Transistor, 50V 47K/2.2Kohm, Sot-363, Full Reel; Digital Transistor Polarity Onsemi - 45J1726 - Newark, An Avnet Company
Chicago, IL, United States
Brt Transistor, 50V 47K/2.2Kohm, Sot-363, Full Reel; Digital Transistor Polarity Onsemi
45J1726
Brt Transistor, 50V 47K/2.2Kohm, Sot-363, Full Reel; Digital Transistor Polarity Onsemi 45J1726
BRT TRANSISTOR, 50V 47K/2.2KOHM, SOT-363, FULL REEL; Digital Transistor Polarity:Dual NPN; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:2.2kohm; Base-Emitter Resistor R2:47kohmRoHS Compliant: Yes

BRT TRANSISTOR, 50V 47K/2.2KOHM, SOT-363, FULL REEL; Digital Transistor Polarity:Dual NPN; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:2.2kohm; Base-Emitter Resistor R2:47kohmRoHS Compliant: Yes

Supplier's Site
Brt Transistor, 50V 47K/2.2Kohm, Sot-363; Digital Transistor Polarity Onsemi - 10N9541 - Newark, An Avnet Company
Chicago, IL, United States
Brt Transistor, 50V 47K/2.2Kohm, Sot-363; Digital Transistor Polarity Onsemi
10N9541
Brt Transistor, 50V 47K/2.2Kohm, Sot-363; Digital Transistor Polarity Onsemi 10N9541
BRT TRANSISTOR, 50V 47K/2.2KOHM, SOT-363; Digital Transistor Polarity:Dual NPN; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:2.2kohm; Base-Emitter Resistor R2:47kohm RoHS Compliant: Yes

BRT TRANSISTOR, 50V 47K/2.2KOHM, SOT-363; Digital Transistor Polarity:Dual NPN; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:2.2kohm; Base-Emitter Resistor R2:47kohm RoHS Compliant: Yes

Supplier's Site
Trans, 50V, 2.2/47Kohm, Sot363; Digital Transistor Polarity Onsemi - 03AJ2367 - Newark, An Avnet Company
Chicago, IL, United States
Trans, 50V, 2.2/47Kohm, Sot363; Digital Transistor Polarity Onsemi
03AJ2367
Trans, 50V, 2.2/47Kohm, Sot363; Digital Transistor Polarity Onsemi 03AJ2367
TRANS, 50V, 2.2/47KOHM, SOT363; Digital Transistor Polarity:Dual NPN; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:2.2kohm; Base-Emitter Resistor R2:47kohm; Resistor Ratio, R1 RoHS Compliant: Yes

TRANS, 50V, 2.2/47KOHM, SOT363; Digital Transistor Polarity:Dual NPN; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:2.2kohm; Base-Emitter Resistor R2:47kohm; Resistor Ratio, R1 RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - MUN5235DW1T1G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
MUN5235DW1T1G
Discrete Semiconductor Products - Transistors - Bipolar (BJT) MUN5235DW1T1G
TRANS 2NPN PREBIAS 0.25W SOT363

TRANS 2NPN PREBIAS 0.25W SOT363

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) DigiKey Win Source Electronics Rochester Electronics ERSAELECTRONICS PTE. LTD. RS Components, Ltd. RS Components, Ltd. VAST STOCK CO., LIMITED Newark, An Avnet Company Newark, An Avnet Company Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Bipolar RF Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors Transistors Transistors Transistors Bipolar RF Transistors
Product Number MUN5235DW1T1G MUN5235DW1T1GOSDKR-ND 024614-MUN5235DW1T1G MUN5235DW1T1G 293-MUN5235DW1T1G 7916242P 7916242 MUN5235DW1T1G 45J1726 10N9541 03AJ2367 MUN5235DW1T1G
Product Name Bipolar Transistor Arrays, Pre-Biased Bipolar Transistor Arrays, Pre-Biased TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - MUN5235DW1T1G Dual 50V 100mA Bipolar Transistor Bipolar Transistors Bipolar Transistors Bipolar Transistors - Pre-Biased Brt Transistor, 50V 47K/2.2Kohm, Sot-363, Full Reel; Digital Transistor Polarity Onsemi Brt Transistor, 50V 47K/2.2Kohm, Sot-363; Digital Transistor Polarity Onsemi Trans, 50V, 2.2/47Kohm, Sot363; Digital Transistor Polarity Onsemi Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity 2 NPN - Pre-Biased (Dual); NPN NPN 2 NPN - Pre-Biased (Dual); NPN NPN NPN NPN NPN
Package Type 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 SOT3; SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363 6 LEAD SOT-363 (SC-88) Sot-363 (sc-88) TO-3; SOT3 TO-3; SOT3 TO-3
IC(max) 100 milliamps 100 milliamps 100 milliamps 100 milliamps
VCEO 50 volts 50 volts 50 volts 50 volts
Output Power 0.2500 watts
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