NPN BJT Transistor, 50V, 100mA, SC Package Product overview: MUN2232T1G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, 100mA. Search-friendly keywords include transistor, BJT, switching, amplification, 50V, 100mA, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-MUN2232T1G can be used for catalog matching and distributor lookup.
NPN Bipolar Digital Transistor (BRT)
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 338mW Surface Mount SC-59
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 338mW Surface Mount SC-59
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 338mW Surface Mount SC-59
Manufacturer: ON Semiconductor
Win Source Part Number: 024594-MUN2232T1G
Packaging: Reel - TR
Mounting: SMD (SMT)
Transistor Polarity: NPN - Pre-Biased
Resistor - Base (R1) (Ohms): 4.7k
Resistor - Emitter Base (R2) (Ohms): 4.7k
Categories: Discrete Semiconductor Products
Status: Active
Case / Package: SC-59
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 250mV @ 1mA, 10mA
Collector Cut-off Current(Max): 500nA
Typical Gain (hFE) (Min): 15 @ 5mA, 10V
Maximum Power Dissipation: 338mW
Popularity: Medium
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Balance
TRANS PREBIAS NPN 50V 100MA SC59
Bipolar Transistors - Pre-Biased SS BR XSTR NPN 50V
TRANS PREBIAS NPN 50V 0.1A SC59
BRT TRANSISTOR, 50V, 4.7K/4.7KOHM, SC-59, FULL REEL; Digital Transistor Polarity:Single NPN; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:4.7kohm; RF Transistor Case:SC-59 RoHS Compliant: Yes
TRANS, AEC-Q101, PNP, -50V, -0.1A, SC-59; Digital Transistor Polarity:Single NPN; Collector Emitter Voltage V(br)ceo:-50V; Continuous Collector Current Ic:-100mA; Base Input Resistor R1:4.7kohm; Base-Emitter Resistor R2:4.7kohm; RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | Rochester Electronics | DigiKey | Win Source Electronics | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Bipolar RF Transistors | Bipolar RF Transistors | Transistors | Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Transistors | Transistors |
| Product Number | 292-MUN2232T1G | MUN2232T1G | MUN2232T1GOSTR-ND | 024594-MUN2232T1G | MUN2232T1G | MUN2232T1G | MUN2232T1G | 88H4920 | 13AC3676 |
| Product Name | 50V 100mA Bipolar Transistor | Single, Pre-Biased Bipolar Transistors | TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - MUN2232T1G | Single, Pre-Biased Bipolar Transistors | Bipolar Transistors - Pre-Biased | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | Brt Transistor, 50V, 4.7K/4.7Kohm, Sc-59, Full Reel; Digital Transistor Polarity Onsemi | Trans, Aec-Q101, Pnp, -50V, -0.1A, Sc-59; Digital Transistor Polarity Onsemi | |
| Polarity | NPN | NPN | NPN | NPN; NPN - Pre-Biased | NPN - Pre-Biased; NPN | PNP | |||
| IC(max) | 100 milliamps | 100 milliamps | 100 milliamps | ||||||
| VCEO | 50 volts | 50 volts | 50 volts | ||||||
| PD | 338 milliwatts | ||||||||
| TJ | -55 C (-67 F) |
