Renesas Electronics Corporation Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF FETs, MOSFETs NE3515S02-T1D-A

RF Small Signal Field-Effect Transistor, KU Band, N-Channel, Hetero-junction FET

Win Source Part Number: 1379317-NE3515S02-T1D-A
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF FETs, MOSFETs
Fake Threat In the Open Market: 41 pct.
Mfr: Renesas Electronics America Inc
Package: Bulk
Product Status: Obsolete
Frequency: 12GHz
Package / Case: 4-SMD, Flat Leads
Supplier Device Package: S02
Technology: HFET
HTSUS: 8541.21.0075
Voltage - Rated: 4 V
ECCN: EAR99
Current Rating (Amps): 88mA
Gain: 12.5dB
Current - Test: 10 mA
Noise Figure: 0.3dB
Power - Output: 14dBm
Voltage - Test: 2 V

RF MOSFET HFET 2V S02 Product overview: NE3515S02-T1D-A from Renesas Electronics Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 2V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 2V, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-NE3515S02-T1D-A can be used for catalog matching and distributor lookup.