onsemi MUN2212T3

NPN silicon surface mount transistor with integrated monolithic bias resistor network, housed in the SC-59 package. The device features a collector-base voltage rating of 50 V, collector-emitter voltage of 50 V, and a maximum collector current of 100 mA. Total power dissipation is 200 mW at 25°C, derating at 1.6 mW/°C above 25°C. Thermal resistance junction-to-ambient is 625 °C/W. The part includes a monolithic bias network with R1 = 22 kΩ and R2 = 22 kΩ. Operating and storage temperature range is -65°C to +150°C. Designed for surface mount assembly using wave or reflow soldering. Meets EIA-481 standards for tape and reel packaging. It replaces discrete resistor-transistor combinations, reducing component count and board space.