Rochester Electronics TRANSISTORS - Transistors - FETs, MOSFETs - RF - MTB50P03HDL MTB50P03HDL

The MTB50P03HDL is a P-channel power MOSFET in a D2PAK (TO-263-3) surface mount package, rated for 30 V drain-to-source voltage and 50 A continuous drain current at 25°C. It features a maximum on-resistance of 25 mΩ at VGS = 5 V, avalanche energy rating of 1250 mJ, and a reverse recovery time of 106 ns for its integrated body diode. Junction-to-case thermal resistance is 1.0°C/W, and total power dissipation is 125 W. The gate threshold voltage ranges from 1.0 V to 2.0 V. The package is Pb-free compliant and meets RoHS and AEC-Q200 standards.